150 nm FDSOI器件的背栅NBTI效应研究  

Study on NBTI of Back-gate of 150 nm FDSOI

作　　者：赵杨婧 禹胜林[1] 赵晓松 洪根深 顾祥 ZHAO Yangjing;YU Shenglin;ZHAO Xiaosong;HONG Genshen;GU Xiang(School of Electronic&Information Engineering,Nanjing University of Information Science&Technology,Nanjing,210000,CHN;The 58th Research Institute of China Electronics Technology Group Corporation,Wuxi,Jiangsu,214072,CHN)

机构地区：[1]南京信息工程大学电子与信息工程学院,南京210000 [2]中国电子科技集团公司第五十八研究所,江苏无锡214072

出　　处：《固体电子学研究与进展》2023年第6期552-556,共5页Research & Progress of SSE

摘　　要：负偏置温度不稳定(NBTI)是器件的主要可靠性问题之一,本文通过对150 nm工艺的FDSOI器件进行加速应力试验,分析了不同栅极偏置应力、温度应力下器件阈值电压和饱和电流的退化特性,发现背栅偏置更容易导致NBTI退化,同时研究了正背栅耦合作用下NBTI效应的退化机理。Negative bias temperature instability(NBTI)is one of the main reliability problem of the device.In this paper,the degradation characteristics of threshold voltage and saturation current of 150 nm process fully depleted silicon on insulator(FDSOI)under different gate bias stress and different temperature stress was analyzed through accelerated stress tests.It is found that NBTI degradation is more likely to be caused by back‑gate bias stress.At the same time,the degradation mechanism of NBTI effect under front‑back gate coupling was studied.

关 键 词：负偏置温度不稳定性(NBTI) 全耗尽型绝缘体上硅 背栅偏置 正背栅应力耦合 

分 类 号：TN386[电子电信—物理电子学]