机构地区:[1]Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,State Key Laboratory of Chemo/Biosensing and Chemometrics,College of Materials Science and Engineering,Hunan University,Changsha 410082,China [2]Hunan Institute of Optoelectronic Integration,Hunan University,Changsha 410082,China [3]Hunan Institute of Advanced Sensing and Information Technology,Xiangtan University,Xiangtan 411105,China [4]School of Integrated Circuits,Peking University,Beijing 100871,China [5]Wuhan National Laboratory for Optoelectronics(WNLO),Huazhong University of Science and Technology(HUST),Wuhan 430074,China
出 处:《Science Bulletin》2024年第4期473-482,共10页科学通报(英文版)
基 金:supported by the National Natural Science Foundation of China(62104066,52221001,62090035,U19A2090,U22A20138,52372146,and 62101181);the National Key R&D Program of China(2022YFA1402501,2022YFA1204300);the Natural Science Foundation of Hunan Province(2021JJ20016);the Science and Technology Innovation Program of Hunan Province(2021RC3061);the Key Program of Science and Technology Department of Hunan Province(2019XK2001,2020XK2001);the Open Project Program of Wuhan National Laboratory for Optoelectronics(2020WNLOKF016);the Open Project Program of Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(22ZS01);the Project funded by China Postdoctoral Science Foundation(2023TQ0110);the Innovation Project of Optics Valley Laboratory(OVL2023ZD002).
摘 要:The growth of data and Internet of Things challenges traditional hardware,which encounters efficiency and power issues owing to separate functional units for sensors,memory,and computation.In this study,we designed an a-phase indium selenide(a-In_(2)Se_(3))transistor,which is a two-dimensional ferroelectric semiconductor as the channel material,to create artificial optic-neural and electro-neural synapses,enabling cutting-edge processing-in-sensor(PIS)and computing-in-memory(CIM)functionalities.As an optic-neural synapse for low-level sensory processing,the a-In_(2)Se_(3)transistor exhibits a high photoresponsivity(2855 A/W)and detectivity(2.91×10^(14)Jones),facilitating efficient feature extraction.For high-level processing tasks as an electro-neural synapse,it offers a fast program/erase speed of 40 ns/50μs and ultralow energy consumption of 0.37 aJ/spike.An AI vision system using a-In_(2)Se_(3)transistors has been demonstrated.It achieved an impressive recognition accuracy of 92.63%within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities.This study demonstrates the potential of the a-In_(2)Se_(3)transistor in future vision hardware,enhancing processing,power efficiency,and AI applications.
关 键 词:Two-dimensional ferroelectric SEMICONDUCTOR Processing-in-sensor Computing-in-memory Synaptic device Artificial-intelligence vision system
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