金属诱导晶化(MIC)模式非晶晶化的原位透射电子显微学研究  

Study on amorphous crystallization based on metal induced crystallization(MIC)mode by in situ transmission electron microscopy

作　　者：向斐斐 李傲 范浩涵 林杨剑 程峰[1] 葛炳辉 XIANG Feifei;LI Ao;FAN Haohan;LIN Yangjian;CHENG Feng;GE Binghui(Information Materials and Intelligent Sensing Laboratory of Anhui Province,Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education,Institutes of Physical Science and Information Technology,Anhui University,Hefei Anhui 230601,China)

机构地区：[1]安徽大学信息材料与智能感知安徽省实验室,杂化材料结构与功能调控教育部重点实验室,物质科学与信息技术研究院,安徽合肥230601

出　　处：《电子显微学报》2024年第1期45-51,共7页Journal of Chinese Electron Microscopy Society

基　　金：国家自然科学基金资助项目(No.11874394);安徽省高校协同创新计划项目(No.GXXT⁃2020⁃003);安徽省教育厅重点项目(No.2022AH050116).

摘　　要：非晶晶化作为一种制备晶体材料的有效方法已得到广泛应用,近年来,采用金属诱导晶化(metal induced crystallization,MIC)法显著降低材料的晶化温度引起了研究者们的兴趣。为探究MIC模式下温度对金属催化剂扩散行为及晶化过程中材料结构变化的本征影响,本研究以金属Pt诱导非晶硅晶化为例,采用透射电镜结合原位热学研究方法,在原子尺度上直接观察MIC模式下非晶硅的晶化过程。结果显示在550℃下Pt/Si界面处产生了硅化物Pt_(2)Si等化合物,使得材料界面处出现明显的结构变化。而当温度升高至650℃时,Pt会以颗粒移动的形式发生扩散,且扩散过程中会发生明显的几何结构变化。Pt与非晶硅不同的扩散速度会导致界面处出现柯肯达尔孔洞而阻碍界面处两种材料的进一步扩散。当温度升高至700℃时,非晶硅发生晶化,且在此过程中Pt对非晶硅的晶化起了促进作用。Amorphous crystallization has been widely used as an effective method to produce crystalline materials.In recent years,metal induced crystallization(MIC)method has attracted researchers'interest.This work investigated the intrinsic effect of temperature on the diffusion behavior of metal catalysts and the structural changes of materials during the crystallization process under MIC mode.Metal Pt induced crystallization of amorphous silicon was studied.Transmission electron microscopy combined with in⁃situ thermal research method was used to directly observe the crystallization process of amorphous silicon under MIC mode at the atomic scale.The result showed that silicide Pt2Si and other compounds were produced on the Pt/Si interface at 550℃,resultsing in obvious structural changes at the interface.When the temperature was kept at 650℃,Pt diffused in the form of particle movement.Significant geometric changes occurred during the diffusion process.The different diffusion rates of Pt and amorphous silicon led to the appearance of Kirkendall pores at the interface,which hindered the further diffusion of the two materials at the interface.When the temperature was elevated to 700℃,amorphous silicon underwent crystallization,and Pt promoted the crystallization of amorphous silicon during this process.

关 键 词：透射电镜 原位 MIC 非晶硅 

分 类 号：TG115.215.3[金属学及工艺—物理冶金] O795[金属学及工艺—金属学]