Sub-6 GHz GaAs pHEMT高功率吸收型单刀双掷开关  

High-power Absorptive Single-pole Double-throw Switch Using GaAs pHEMT Technology for Sub-6 GHz Applications

作　　者：陈梓雅 张志浩[1,2] 周杰海 李玮鑫 章国豪 CHEN Ziya;ZHANG Zhihao;ZHOU Jiehai;LI Weixin;ZHANG Guohao(School of Integrated Circuits,Guangdong University of Technology,Guangzhou,510006,CHN;Synergy Innovation Institution of GDUT,Heyuan,Guangdong,517000,CHN)

机构地区：[1]广东工业大学集成电路学院,广州510006 [2]河源广工大协同创新研究院,广东河源517000

出　　处：《固体电子学研究与进展》2024年第1期39-44,共6页Research & Progress of SSE

基　　金：国家自然科学基金资助(61974035);广东省“珠江人才计划”本土创新科研团队(2017BT01X168);5G通信微基站用的高性能射频功率放大器芯片的研发及产业化(202009030006)。

摘　　要：基于0.5μm GaAs赝配高电子迁移率晶体管(pHEMT)工艺,设计了一款高功率吸收型单刀双掷开关芯片。芯片采用堆叠技术和前馈电容技术来提高功率容量和线性度。通过在传统串并联结构的输出端口引入串并联阻容匹配网络,实现了芯片在导通和关断状态下的良好端口匹配。该开关芯片的尺寸为0.82 mm×0.37 mm。实测结果显示,在0.7~6.0 GHz的工作频段内,该开关实现了低于1.1 dB的插入损耗、高于36 dB的隔离度、优于15 dB的通路回波损耗和优于10 dB的断路回波损耗。此外,0.1 dB功率压缩点在1、2、4和6 GHz时,均约40 dBm。A high-power absorptive single-pole double-throw(SPDT)switch was designed using a 0.5μm GaAs pseudomorphic high electron mobility transistor(pHEMT)technology.To achieve high power capability and linearity,stacked-FETs and feed-forward capacitor techniques were em⁃ployed.By introducing a series-parallel resistance-capacitance matching network into the output ports of the conventional series-parallel configuration,the effective port matching of the chip was realized both in the on and off states.The measured results demonstrate that the presented switch,with a chip size of 0.82 mm×0.37 mm,exhibits insertion loss of less than 1.1 dB,isolation of greater than 36 dB,on-state return loss of better than 15 dB,and off-state return loss of better than 10 dB in the frequency range of 0.7-6.0 GHz.Additionally,the 0.1 dB power compression points are approximately 40 dBm at 1,2,4 and 6 GHz.

关 键 词：砷化镓赝配高电子迁移率晶体管 吸收型开关 高功率 高隔离 阻抗匹配 

分 类 号：TN492[电子电信—微电子学与固体电子学]