Dual Gate液晶显示屏栅极制程断路缺陷的分析与改善  

Analysis and Improvement of Line Open Defects in Gate Manufacturing Process of Dual Gate LCD

作　　者：杨迪一 孔繁林 胡兴兴 夏莹莹 黄小平 吴成业 郝静 文鑫 莫艳 YANG Diyi;KONG Fanlin;HU Xingxing;XIA Yingying;HUANG Xiaoping;WU Chengye;HAO Jing;WEN Xin;MO Yan(Wuhan BOE Optoelectronic Technology Co.,Ltd.,Wuhan 430040,China;Chengdu CEC Panda Display Technology Co.,Ltd.,Chengdu 610200,China)

机构地区：[1]武汉京东方光电科技有限公司,湖北武汉430040 [2]成都中电熊猫显示科技有限公司,四川成都610200

出　　处：《数字通信世界》2024年第2期47-50,共4页Digital Communication World

摘　　要：文章探究了光刻工序的水汽和ITO刻蚀工序的药液结晶对DualGate产品栅极制程的断路影响,通过DOE试验得到影响因子的最佳改善条件,使55寸DualGate产品栅极制程的断路缺陷发生率整体降低36%,为公司带来80.2万元的月度收益,能够对其他高端产品断路缺陷的改善思路、新工艺设备的设计改进,提供参考。This paper explores the impact of aqueous vapor in the photolithography process and crystallization in the ITO etching process on Gate manufacturing process of Dual Gate products,and proposes effective improvement plans.After the introduction of the optimal improvement conditions,the overall occurrence rate of line open defects in Gate process of the 55”UHD Dual Gate product was reduced by 36%,which gives the company a monthly income of 802000 yuan.It can provide important reference value for the improvement of line open defects in high-end products such as Dual Gate/Triple Gate and the design improvement of new process equipment in the future.

关 键 词：双栅 断路 试验设计 

分 类 号：TN873.93[电子电信—信息与通信工程]