Development of in situ characterization techniques in molecular beam epitaxy  

作　　者：Chao Shen Wenkang Zhan Manyang Li Zhenyu Sun Jian Tang Zhaofeng Wu Chi Xu Bo Xu Chao Zhao Zhanguo Wang 

机构地区：[1]Laboratory of Solid State Optoelectronics Information Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 101804,China [3]School of Physics Science and Technology,Xinjiang University,Urumqi 830046,China [4]School of New Energy and Electronics,Yancheng Teachers University,Yancheng 224002,China [5]Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

出　　处：《Journal of Semiconductors》2024年第3期9-32,共24页半导体学报（英文版）

基　　金：supported by the National Key R&D Program of China(Grant No.2021YFB2206503);National Natural Science Foundation of China(Grant No.62274159);CAS Project for Young Scientists in Basic Research(Grant No.YSBR-056);the“Strategic Priority Research Program”of the Chinese Academy of Sciences(Grant No.XDB43010102).

摘　　要：Ex situ characterization techniques in molecular beam epitaxy(MBE)have inherent limitations,such as being prone to sample contamination and unstable surfaces during sample transfer from the MBE chamber.In recent years,the need for improved accuracy and reliability in measurement has driven the increasing adoption of in situ characterization techniques.These techniques,such as reflection high-energy electron diffraction,scanning tunneling microscopy,and X-ray photoelectron spectroscopy,allow direct observation of film growth processes in real time without exposing the sample to air,hence offering insights into the growth mechanisms of epitaxial films with controlled properties.By combining multiple in situ characterization techniques with MBE,researchers can better understand film growth processes,realizing novel materials with customized properties and extensive applications.This review aims to overview the benefits and achievements of in situ characterization techniques in MBE and their applications for material science research.In addition,through further analysis of these techniques regarding their challenges and potential solutions,particularly highlighting the assistance of machine learning to correlate in situ characterization with other material information,we hope to provide a guideline for future efforts in the development of novel monitoring and control schemes for MBE growth processes with improved material properties.

关 键 词：epitaxial growth thin film in situ characterization molecular beam epitaxy(MBE) 

分 类 号：TN304.054[电子电信—物理电子学]