975 nm multimode semiconductor lasers with high-order Bragg diffraction gratings  

作　　者：Zhenwu Liu Li Zhong Suping Liu Xiaoyu Ma 

机构地区：[1]National Engineering Research Center for Optoelectronic Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Materials Sciences and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第3期38-44,共7页半导体学报（英文版）

基　　金：supported by the National Key R&D Program of China,No.2022YFB4601201.

摘　　要：The 975 nm multimode diode lasers with high-order surface Bragg diffraction gratings have been simulated and calcu-lated using the 2D finite difference time domain(FDTD)algorithm and the scattering matrix method(SMM).The periods and etch depth of the grating parameters have been optimized.A board area laser diode(BA-LD)with high-order diffraction grat-ings has been designed and fabricated.At output powers up to 10.5 W,the measured spectral width of full width at half maxi-mum(FWHM)is less than 0.5 nm.The results demonstrate that the designed high-order surface gratings can effectively nar-row the spectral width of multimode semiconductor lasers at high output power.

关 键 词：laser diodes distributed Bragg reflector high order gratings high power laser diodes narrow spectrum width 

分 类 号：TN248.4[电子电信—物理电子学]