A novel one-time-programmable memory unit based on Schottky-type p-GaN diode  

作　　者：Chao Feng Xinyue Dai Qimeng Jiang Sen Huang Jie Fan Xinhua Wang Xinyu Liu 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2024年第3期53-57,共5页半导体学报（英文版）

基　　金：supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences (CAS);in part by the CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62334012, Grant 62074161, Grant 62004213, Grant U20A20208, and Grant 62304252;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by the IMECAS-HKUST-Joint Laboratory of Microelectronics

摘　　要：In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.

关 键 词：wide-bandgap semiconductor one-time programmable Schottky-type p-GaN diode read-only memory device 

分 类 号：TN311.7[电子电信—物理电子学]