Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy  

作　　者：Jin Sui Jiaxiang Chen Haolan Qu Yu Zhang Xing Lu Xinbo Zou 

机构地区：[1]School of Information Science and Technology,ShanghaiTech University,Shanghai 201210,China [2]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [3]School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100049,China [4]School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou 510275,China

出　　处：《Journal of Semiconductors》2024年第3期58-63,共6页半导体学报（英文版）

基　　金：supported by ShanghaiTech University Startup Fund 2017F0203-000-14;the National Natural Science Foundation of China(Grant No.52131303);Natural Science Foundation of Shanghai(Grant No.22ZR1442300);in part by CAS Strategic Science and Technology Program(Grant No.XDA18000000).

摘　　要：Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

关 键 词：GaN deep level transient spectroscopy minority carrier trap time constant trap concentration 

分 类 号：TN311.7[电子电信—物理电子学]