Enhancing BiVO_(4)photoanode performance by insertion of an epitaxial BiFeO_(3)ferroelectric layer  

作　　者：Haejin Jang Yejoon Kim Hojoong Choi Jiwoong Yang Yoonsung Jung Sungkyun Choi Donghyeon Lee Ho Won Jang Sanghan Lee 

机构地区：[1]School of Materials Science and Engineering,Gwangju Institute of Science and Technology,Gwangju 61005,Republic of Korea [2]Department of Materials Science and Engineering,Seoul National University,Seoul 08826,Republic of Korea

出　　处：《Journal of Energy Chemistry》2024年第2期71-78,I0003,共9页能源化学（英文版）

基　　金：supported by the program of Future Hydrogen Original Technology Development(2021M3I3A1084747),through the National Research Foundation of Korea(NRF);funded by the Korean government(Ministry of Science and ICT(MSIT));by the NRF grant funded by the Korea government(MSIT)(No.2020R1A2C1005590)。

摘　　要：BiVO_(4)(BVO)is a promising material as the photoanode for use in photoelectrochemical applications.However,the high charge recombination and slow charge transfer of the BVO have been obstacles to achieving satisfactory photoelectrochemical performance.To address this,various modifications have been attempted,including the use of ferroelectric materials.Ferroelectric materials can form a permanent polarization within the layer,enhancing the separation and transport of photo-excited electron-hole pairs.In this study,we propose a novel approach by depositing an epitaxial BiFeO_(3)(BFO)thin film underneath the BVO thin film(BVO/BFO)to harness the ferroelectric property of BFO.The self-polarization of the inserted BFO thin film simultaneously functions as a buffer layer to enhance charge transport and a hole-blocking layer to reduce charge recombination.As a result,the BVO/BFO photoanodes showed more than 3.5 times higher photocurrent density(0.65 mA cm^(-2))at 1.23 V_(RHE)under the illumination compared to the bare BVO photoanodes(0.18 m A cm^(-2)),which is consistent with the increase of the applied bias photon-to-current conversion efficiencies(ABPE)and the result of electrochemical impedance spectroscopy(EIS)analysis.These results can be attributed to the self-polarization exhibited by the inserted BFO thin film,which promoted the charge separation and transfer efficiency of the BVO photoanodes.

关 键 词：PHOTOELECTROCHEMICAL PHOTOANODE BiVO_(4) Ferroelectric materials BiFeO_(3) 

分 类 号：O644.1[理学—物理化学] TB383.2[理学—化学]