Macro Meso Response and Stress Wave Propagation Characteristics of MCT High-Voltage Switch Under Shock load  

作　　者：Yuyang Guo Chuang Chen Ruizhi Wang Enling Tang 

机构地区：[1]Key Laboratory of Transient Physical Mechanics and Energy Conversion Materials of Liaoning Province,Shenyang Ligong University,Shenyang,110159,Liaoning,China

出　　处：《Defence Technology（防务技术）》2024年第2期317-335,共19页Defence Technology

基　　金：Youth Talent Project of Basic Scientific Research Project of Liaoning Province Education Department(Grant No.LJKZ0270);Youth Project of Basic Scientific Research Project of Liaoning Province Education Department(Grant No.LJKQZ2021055).

摘　　要：In order to study the dynamic and electrical coupling response characteristics of Metal Oxide Semiconductor Controlled Thyristor(MCT)high-voltage switch under the synergic action of mechanical load and high voltage,the separated Hopkinson pressure bar(SHPB)test system was used to simulate different impact load environments,and combined with the multi-layer high-voltage ceramic capacitor charging and discharging system,the instantaneous electrical signals of MCT high-voltage switch were collected.Combined with numerical simulation and theoretical analysis,the failure mode and stress wave propagation characteristics of MCT high voltage switch were determined.The mechanical and electrical coupling response characteristics and failure mechanism of MCT high voltage switch under dynamic load were revealed from macroscopic and microscopic levels.The results show that the damage modes of MCT high-voltage switches can be divided into non-functional damage,recoverable functional damage,non-recoverable damage and structural damage.Due to the gap between the metal gate and the oxide layer,the insulating oxide layer was charged.After placing for a period of time,the elastic deformation of the metal gate partially recovered and the accumulated charge disappeared,which induced the recoverable functional damage failure of the device.In addition,obvious cracks appeared on both sides of the monocrystalline silicon inside the MCT high-voltage switch,leading to unrecoverable damage of the device.

关 键 词：MCT Impact load Failure analysis Stress wave Numerical simulation 

分 类 号：TJ430.3[兵器科学与技术—火炮、自动武器与弹药工程]