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作 者:程然[1] 李博[2] 王宗巍[3] 张结印 单伟伟 张建军 蔡一茂[3] 韩根全[2] Ran CHENG;Bo LI;Zongwei WANG;Jieyin ZHANG;Weiwei SHAN;Jianjun ZHANG;Yimao CAI;Genquan HAN(School of Micro-Nano Electronics,Zhejiang University,Hangzhou 311200,China;Hangzhou Institute of Technology,Xidian University,Hangzhou 7311231,China;School of Integrated Circuits,Peking University,Beijing 100871,China;Semiconductor Heterogeneous Materials and Device Center,Songshan Lake Materials Laboratory,Dongguan 523808,China;School of Integrated Circuits,Southeast University,Nanjing 211189,China;Nanoscale Physics and Devices Laboratory,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)
机构地区:[1]浙江大学微纳电子学院,杭州311200 [2]西安电子科技大学杭州研究院,杭州311231 [3]北京大学集成电路学院,北京100871 [4]松山湖材料实验室半导体异质材料与器件中心,东莞523808 [5]东南大学集成电路学院,南京211189 [6]中国科学院物理研究所纳米物理与器件重点实验室,北京100190
出 处:《中国科学:信息科学》2024年第1期88-101,共14页Scientia Sinica(Informationis)
基 金:国家自然科学基金(批准号:62025402,62025401,62322401,12304100);中央高校基本科研业务费专项资金资助项目。
摘 要:过去60多年,集成电路技术的进步推动了电子信息领域的快速发展.随着工艺制程进入纳米阶段,通过微缩化技术进一步提升器件和电路的性能需要克服技术和成本方面的多重挑战.探寻新的器件、设计和架构技术是高性能计算领域解决当下瓶颈的必然路径.低温芯片技术,利用晶体管低温下电学性能的提升,可以进一步提高逻辑芯片的算力并降低动态和静态功耗,由于和现有集成电路技术兼容性较高,是低成本实现更高性能计算的理想技术路线之一.此外,随着量子计算技术的发展,可扩展的大规模量子芯片需要和极低温互补金属氧化物半导体CMOS电路以及存储芯片实现片上集成,进而实现更高效的数据处理.本文面向高性能计算应用,从器件表征、模型、仿真和设计、应用等多个层面,分析并总结了低温芯片技术领域的发展历程、理论基础和技术挑战,并给出针对性的解决方案和建议,有助于推动我国在低温芯片技术领域的持续发展.Over the past 60 years,the progress of integrated circuit technology has promoted the prosperity of the information industry.As process technology pioneers sub-10 nm nodes,further performance improvement through device miniaturization encounters great challenges from both the cost and technology perspectives.It is a must to explore novel device structures,circuit design,or architecture to achieve higher computing performance.Low-temperature(LT,77 K)complementary metal oxide semiconductor(CMOS)technology,which benefits from higher device performance at lower temperatures,can be used to further increase computing speed and reduce dynamic and static power consumption.Due to the high level of compatibility with current CMOS technology,it is an ideal choice for future high-performance computing at an acceptable cost.Another scenario for the application of cryogenic or ultralow-temperature(<10 K)CMOS circuits is integration with qubits to realize large-scale quantum chips.This paper reviews the history and state-of-the-art progress in low-temperature CMOS technology,including device characterization,modeling,process design kits,applications,etc.Theoretical and technical challenges in the field are forecast and discussed.Possible solutions are also provided to guide the continuous development of low-temperature CMOS technology in China.
关 键 词:低温芯片 低温电子学 低温PDK 高性能计算 量子计算
分 类 号:TN40[电子电信—微电子学与固体电子学]
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