一种基于传输线理论的pn结二极管小信号模型  

A Small Signal Model of pn Junction Diode Based on Transmission Line Theory

作　　者：李翔 刘军[1] Li Xiang;Liu Jun(School of Electronic and Information,Hangzhou Dianzi University,Hangzhou 310018,China)

机构地区：[1]杭州电子科技大学电子信息学院,杭州310018

出　　处：《半导体技术》2024年第3期218-225,共8页Semiconductor Technology

摘　　要：为了精确表征毫米波频段pn结二极管的特性,提出了一种基于传输线理论的pn结二极管小信号模型。该模型包括表征pn结的本征部分和寄生部分。以量化的pn结耗尽区串联电阻作为中间项,通过非线性传输线理论近似方法,推导出全新的pn结二极管小信号模型的拓扑结构。通过导纳参数和阻抗参数的参数解析提取方法,提取等效电路中各元件参数值。使用某磷化铟(InP)工艺线加工所得2×3μm、8×8μm、4×16μm二极管的散射参数数据进行验证。结果表明,在1~110 GHz频率范围内,不同偏压的模型仿真结果与测试结果均吻合较好,同时也能表明模型在毫米波频段内有良好的适用性。To characterize the characteristics of pn junction diode in millimeter wave frequency band accurately,a small signal model of pn junction diode based on transmission line theory was presented.This model includes the intrinsic part and parasitic part which characterize the pn junction.Taking the quantized series resistance in the depletion region of pn junction as the middle term,a new topology structure of the small signal model of pn junction diode was derived by the approximate method of nonlinear transmission line theory.Through the parameter extraction method of admittance parameter and impedance parameter,the parameter values of each component in the equivalent circuit were extracted.The scattering parameter data of 2×3μm,8×8μm and 4×16μm diodes processed in the indium phosphide process line were used for verification.The results show that the model simulation results are in good agreement with the measured results in the frequency range of 1-110 GHz under different bias voltages,and they also show that the model has good applicability in millimeter wave frequency band.

关 键 词：毫米波频段 PN结 耗尽区串联电阻 传输线理论 参数解析提取 

分 类 号：TN31[电子电信—物理电子学]