研磨型AlN基板表面腐蚀对AlN-AMB覆铜板剥离强度的影响  

Influence of Surface Etching of Lapping AIN Substrates on Peeling Strengths of AIN-AMB Cu Substrates

作　　者：许海仙 曾祥勇 王吕华 朱家旭 汤文明[3,4] Xu Haixian;Zeng Xiangyong;Wang Luhua;Zhu Jiaxu;Tang Wenming(The 43^(rd)Research Institute,CETC,Hefei 230088,China;Hefei Shengda Electronic Technology Industry Co.,Ltd.,Hefei 230088,China;School of Materials Science and Engincering,Hefei Unirersity of Technology,Hefei 230009,China;Anhui Province Key Laboratory of Microsystem,Hefei 230088,China)

机构地区：[1]中国电子科技集团公司第四十三研究所,合肥230088 [2]合肥圣达电子科技实业有限公司,合肥230088 [3]合肥工业大学材料科学与工程学院,合肥230009 [4]微系统安徽省重点实验室,合肥230088

出　　处：《半导体技术》2024年第3期246-251,共6页Semiconductor Technology

基　　金：安徽省重大科技专项(202003a05020006);安徽省重点研究与开发计划项目(202004a05020022)。

摘　　要：为了解决研磨型氮化铝(AlN)基板制备的氮化铝活性金属钎焊(AlN-AMB)覆铜板剥离强度低的问题,采用浓度为0.25 mol/L的NaOH水溶液,在50℃条件下,对研磨型AlN基板表面进行腐蚀,开展腐蚀前后AlN基板表面微观形貌及AlN-AMB覆铜板界面剥离强度等的对比探究。结果表明,研磨型AlN基板表面存在大量破碎晶粒和微裂纹,所制备的AlN-AMB覆铜板气孔率较高,界面剥离强度只有5.787 N/mm。腐蚀可有效去除其表面破碎晶粒和微裂纹,提升AlN基板表面致密度和一致性。采用35 min腐蚀AlN基板制备的AlN-AMB覆铜板气孔率大幅降低,剥离强度提升至10.632 N/mm,相比处理前提升了83.7%。In order to solve the problem of low peeling strength of aluminium nitride active metal brazed(AlN-AMB)copper substrates prepared by the lapping AlN substrates,NaOH aqueous solution with concentration of 0.25 mol/L was taken to etch the surface of the lapping AlN substrate at 50℃.Then comparative investigations on surface micro morphologies of the AlN substrates and interface peeling strengths of the AlN-AMB substrates before and after etching were performed.The results show that there are a large number of broken grains and micro-cracks on the lapping AlN substrate surface,the prepared AlN-AMB copper substrate has a high porosity,and the interface peeling strength is only as low as 5.787 N/mm.By etching,the surface broken grains and micro-cracks of the lapping AlN substrate can be effectively removed,thus improving the density and consistency of the AlN substrate surface.Porosity of the prepared AlN-AMB copper substrate by etching the AlN substrate for 35 min is greatly decreased,and the peeling strength is improved to 10.632 N/mm,which is 83.7% higher than before.

关 键 词：氮化铝基板 活性金属钎焊(AMB) 腐蚀 显微组织结构 剥离强度 

分 类 号：TQ174.756[化学工程—陶瓷工业] TN405[化学工程—硅酸盐工业]