具有自驱动有源缓冲器的GaN基高效准谐振反激式功率变换器  

GaN Based Efficient Quasi-Resonant Flyback Power Converter with Self-Driving Active Buffer

作　　者：王忠[1] 曹通 王福学[1] 边国辉 Wang Zhong;Cao Tong;Wang Fuxue;Bian Guohui(School of Automobile and Transportation,Wuxi Institute of Technology,Wuxi 214121,China;School of Science,Jiangnan University,Wuxi 214122,China;Hebei Dongsen Electronic Technology Co.,Lid.,Shijiazhuang 050200,China)

机构地区：[1]无锡职业技术学院汽车与交通学院,江苏无锡214121 [2]江南大学理学院,江苏无锡214122 [3]河北东森电子科技有限公司,石家庄050200

出　　处：《半导体技术》2024年第3期263-271,共9页Semiconductor Technology

摘　　要：提出了一种具有自驱动有源缓冲器的GaN基高效准谐振(QR)反激式功率变换器,以解决准谐振反激式功率变换器中开关管关断时电压过高的问题。电路以GaN高电子迁移率晶体管(HEMT)器件为主开关管和同步整流器开关管,自驱动有源缓冲器由钳位电容和有源开关管组成。该变换器在主开关管关断期间将开关管的电压浪涌钳位为恒定电压,由于有源开关管驱动信号由变压器的次级侧电流控制,因此不需要单独的控制电路。为验证所提出的变换器和控制电路的有效性,搭建了一个60 W的AC-DC功率变换器,测试结果表明,主开关管的最大电压浪涌约为450 V,具有高达91.6%的能量转换效率。A GaN based efficient quasi-resonant(QR)flyback power converter with self-driving active buffer was proposed to solve the problem of high voltage when the switching transistor was turned off in the quasi-resonant flyback power converter.The circuit used GaN high electron mobility transistor(HEMT)devices as the main switching transistor and synchronous rectifier switching transistor.The selfdriving active buffer was composed of clamp capacitors and active switching transistors.This converter clamped the voltage surge of the switching transistor to a constant voltage during the turn-off period of the main switching transistor.As the drive signal of the active switching transistor was controlled by the secondary side current of the transformer,a separate control circuit was not required.To verify the effectiveness of the proposed converter and control circuit,a 60 W AC-DC power converter was constructed,the test results show that the maximum voltage surge is about 450 V on the main switching transistor and the energy conversion efficiency is up to 91.6%.

关 键 词：反激式变换器 电压浪涌 自驱动有源缓冲器 GaN高电子迁移率晶体管(HEMT) DC-DC 

分 类 号：TN710.4[电子电信—电路与系统]