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作 者:张子扬 Zhang Ziyang(Guizhou Zhenhua Feng Guang Semiconductor Co.,Ltd.,Guiyang 550018,China)
机构地区:[1]贵州振华风光半导体股份有限公司,贵阳550018
出 处:《半导体技术》2024年第3期272-278,共7页Semiconductor Technology
摘 要:基于双极型集成工艺设计并制作了一种高压摆率、低输入偏置电流、低输入失调电流的运算放大器。输入级采用p沟道结型场效应晶体管(PJFET)共源结构,有利于减小输入偏置电流,提高信号接收的灵敏度,实现高输入阻抗、低偏置电流、低输入失调电流和高压摆率。增益级采用常规的共射放大电路结构。输出级采用互补推挽输出结构,提升了驱动负载的能力,并克服交越失真。测试结果表明:在电源电压±15 V、25℃环境温度下,开环电压增益为114.49 dB,正压摆率为12.33 V/μs,负压摆率为-9.76 V/μs,输入偏置电流为42.52 pA,输入失调电流为4.23 pA,输出电压摆幅为-13.56~14.16 V,共模抑制比为105.56 dB,电源抑制比为107.91 dB。A high slew-rate,low input bias current and low input offset current operational amplifier was designed and fabricated based on bipolar integrated process.The input stage adopted a p-channel junction field-effect transistor(PJFET)common source structure,which was conducive to reducing the input bias current,improving the sensitivity to signal reception,and achieving high input impedance,low bias current,low input offset current and high slew-rate.The gain stage adopted a conventional common emitter amplifier circuit structure.The output stage used a complementary pushpull output structure to improve the ability to drive the load and overcome crossover distortion.The tested results show that at a power supply voltage of±15 V and 25 C ambient temperature,the open-loop voltage gain is 114.49 dB,the positive slew-rate is 12.33 V/μs,the negative slew-rate is -9.76 V/μs,the input bias current is 42.52 pA,the input offset current is 4.23 pA,the output voltage swing is -13.56-14.16 V,the common mode rejection ratio is 105.56 dB,and the power supply rejection ratio is 107.91 dB.
关 键 词:PJFET输入级 双极型 高压摆率 宽频带 低失调电流
分 类 号:TN722.77[电子电信—电路与系统] TN431.1
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