钨掺杂BiVO_(4)光阳极降解环丙沙星的表面态行为  

Surface state behavior of W doped BiVO_(4) photoanode for ciprofloxacin degradation

作　　者：路子峥 苏婉宜 施钦 潘鸿辉 赵传起 黄承锋 彭进国 LU Zizheng;SU Wanyi;SHI Qin;PAN Honghui;ZHAO Chuanqi;HUANG Chengfeng;PENG Jinguo(Guangxi Key Laboratory of Advanced Structural Materials and Carbon Neutralization,Guangxi Colleges and Universities Key Laboratory of Environmental-Friendly Materials and Ecological Remediation,Soil and Groundwater Environment Research Institute,School of Materials and Environment,Guangxi Minzu University,Nanning 530006,China;Guangxi Research Institute of Chemical Industry Co.,Ltd.,Nanning 530006,China;College of Chemistry and Chemical Engineering,Guangxi Minzu University,Nanning 530006,China;Guangxi Huatou Testing Technology Co.,Ltd.,Nanning 530006,China)

机构地区：[1]广西民族大学材料与环境学院,广西先进结构材料与碳中和重点实验室,广西高校环境友好材料及生态修复重点实验室,土壤与地下水环境研究中心,南宁530006 [2]广西化工研究院有限公司,南宁530006 [3]广西民族大学化学化工学院,南宁530006 [4]广西华投检测技术有限公司,南宁530006

出　　处：《无机化学学报》2024年第3期591-600,共10页Chinese Journal of Inorganic Chemistry

基　　金：中国博士后科学基金项目(No.2022MD713733);广西高校中青年教师科研基础能力提升项目(No.2019KY0187,2022KY0154);广西民族大学校级引进人才科研启动项目(No.2018KJQD07,2022KJQD29);广西科技计划项目(No.AD23026173,AD23026181)资助。

摘　　要：采用简单浸渍的方法对BiVO_(4)光阳极进行表面钨(W)掺杂,以环丙沙星(CIP)为药品和个人护理产品(PPCPs)模型污染物,研究了W掺杂BiVO_(4)光阳极降解CIP的表面态行为。结果表明,低浓度W掺杂对BiVO_(4)光阳极的晶体结构、表面形貌和光吸收性能没有显著影响。但W掺杂取代了BiVO_(4)光阳极表面的V^(5+),能抑制BiVO_(4)光阳极表面V^(5+)/V^(4+)还原过程,减少复合中心表面态,同时引入更多氧空穴,增加活性位点表面态。CIP的降解反应受表面活性位点控制。表面W掺杂能有效促进CIP降解的电荷转移,提高BiVO_(4)光阳极光电催化降解性能。A simple immersion method was used for surface W doping of BiVO_(4) photoanode.Ciprofloxacin(CIP)was used as a pharmaceuticals and personal care products(PPCPs)model contaminant to study the surface state behavior of W-BiVO_(4) photoanode for CIP degradation.The results show that low concentration of W doping has no significant effect on the crystal structure,surface morphology and optical absorption performance of BiVO_(4) photo-anode.However,W doping replaces V^(5+) on the surface of BiVO_(4) photoanode,inhibiting the V^(5+)/V^(4+) reduction pro-cess on the surface of BiVO_(4) photoanode and reducing the surface state acting as recombination centre.It can also introduce more oxygen vacancies and increase the surface state acting as reaction sites.CIP degradation reaction is controlled by surface active sites.Surface W doping can effectively promote the charge transfer for CIP degradation,thereby improving the photoelectrocatalytic degradation performance of BiVO_(4) photoanode.

关 键 词：钒酸铋 钨掺杂 光电催化氧化技术 环丙沙星 表面态 

分 类 号：TQ035[化学工程]