基于倒金字塔结构的自供电Si/PEDOT:PSS异质结光电探测器  

Self-powered Si/PEDOT:PSS Heterojunction Photodetector Based on Inverted Pyramid Structure

作　　者：陈佳年 沈鸿烈 李玉芳 张静喆 李贺超 张文浩 CHEN Jianian;SHEN Honglie;LI Yufang;ZHANG Jingzhe;LI Hechao;ZHANG Wenhao(Jiangsu Key Laboratory of Materials and Technology for Energy Conversion,College of Materials Science and Technology,Nanjing University of Aeronautics&Astronautics,Nanjing 211106,China)

机构地区：[1]南京航空航天大学材料科学与技术学院,江苏省能量转换材料与技术重点实验室,南京211106

出　　处：《南京航空航天大学学报》2024年第1期188-196,共9页Journal of Nanjing University of Aeronautics & Astronautics

基　　金：国家自然科学基金(61174084)。

摘　　要：随着光电器件的进一步发展,陷光结构得到广泛关注,但是倒金字塔结构、尺寸与其陷光性能之间的关系有待深入研究。本文采用铜银共辅助腐蚀法制备倒金字塔结构并实现倒金字塔结构的尺寸在1μm以下调控,研究发现平均尺寸为1μm倒金字塔结构具有最优异的陷光性能。将具有优异陷光性能的倒金字塔结构硅衬底应用于Si/PEDOT:PSS异质结光电探测器,该光电探测器在外加0 V偏压条件下对980 nm波长的光具有61mA/W的响应度和9.20×10^(12)Jones的比探测率,实现了卓越的光电响应性能。本文为高性能Si/PEDOT:PSS异质结光电探测器的制备提供了一种新思路,证明了倒金字塔结构具有广阔的应用前景。With the further development of optoelectronic devices,the trapped optical structure has been widely paid attention to.However,the relationship between inverted pyramid structure,size and its trapped optical performance needs to be studied in depth.Copper-silver co-assisted etching is used to prepare the inverted pyramidal structure and the size of the structure below 1μm is realized.The study presents that the average size of 1μm inverted pyramidal structure has the best trapping performance.The inverted pyramidal structure with excellent trapping performance is applied to Si/PEDOT:PSS heterojunction photodetector.The photodetector achieves excellent photoelectric response performance with a 61 mA/W responsivity and 9.20×10^(12)Jones specific detectivity for 980 nm wavelength light under an applied 0 V bias.This paper provides a new idea for the preparation of high-performance Si/PEDOT:PSS heterojunction photodetectors and demonstrates that the inverted pyramidal structure has promising applications.

关 键 词：单晶硅 金属辅助化学腐蚀法 倒金字塔结构 自供电 异质结光电探测器 

分 类 号：TB34[一般工业技术—材料科学与工程]