15 nm Bulk nFinFET器件性能研究及参数优化  

Performance research and parameter optimization of15 nm Bulk nFinFET device

作　　者：侯天昊 范杰清[1] 赵强[2] 张芳[2] 郝建红[1] 董志伟[2] Hou Tianhao;Fan Jieqing;Zhao Qiang;Zhang Fang;Hao Jianhong;Dong Zhiwei(School of Electrical and Electronic Engineering,North China Electric Power University,Beijing 102206,China;Institute of Applied Physics and Computational Mathematics,CAEP,Beijing 100094,China)

机构地区：[1]华北电力大学电气与电子工程学院,北京102206 [2]北京应用物理与计算数学研究所,北京100094

出　　处：《强激光与粒子束》2024年第3期92-99,共8页High Power Laser and Particle Beams

摘　　要：为研究Bulk FinFET工作时基本结构参数、器件温度和栅极材料对其性能的影响,建立了一个15 nm n型Bulk FinFET器件模型,仿真分析了不同栅长、鳍宽、鳍高、沟道掺杂浓度、器件工作温度、栅极材料对器件性能的影响,发现增长栅长、降低鳍宽和增加鳍高有助于抑制短沟道效应;1×10^(17)cm^(-3)以下的低沟道掺杂浓度对器件特性影响不大,但高掺杂会使器件失效;器件工作温度的升高会导致器件性能的下降;采用高K介质材料作为栅极器件性能优于传统材料SiO_(2)。Due to the growing severity of the short-channel effect in semiconductor devices,a new type of device,the FinField-Effect Transistor(FinFET),has been proposed,developed and applied.This paper aims to establish a 15 nm n-type Bulk FinFET device model to investigate the impact of basic structural parameters,device temperature,and gate material on the performance of Bulk FinFETs.Simulations are conducted to analyze the effect of different gate lengths,fin widths,fin heights,channel doping concentration,device operating temperature,and gate materials on the performance of FinFETs.The results show that increasing the gate length,decreasing the fin width,and increasing the fin height can effectively suppress the short-channel effect.Moreover,the channel doping concentration below 1×10^(17) cm^(-3) has little effect on the device characteristics,while high doping concentration causes device failure.Additionally,increasing the operating temperature leads to device performance degradation.Finally,using high K dielectric material as the gate material is found to enhance device performance compared to using conventional SiO_(2) material.

关 键 词：Bulk FinFET 短沟道效应 器件性能 参数优化 栅极材料 

分 类 号：TN386.1[电子电信—物理电子学]