用于GaN基HEMT栅极金属TiN的ICP刻蚀工艺  

ICP Etching Process of TiN as Gate Metal for GaN-Based HEMT

作　　者：高阳 周燕萍 王鹤鸣 左超 上村隆一郎 杨秉君 Gao Yang;Zhou Yanping;Wang Heming;Zuo Chao;Ryuuichirou Kamimura;Yang Bingjun(ULVAC Research Center Suzhou Co.,Ltd.,Suzhou 215026,China;ULVAC,Inc.,Chigasaki 253-8543,Japan)

机构地区：[1]爱发科(苏州)技术研究开发有限公司,江苏苏州215026 [2]株式会社アルバック,神奈川县茅崎市253-8543

出　　处：《微纳电子技术》2024年第3期136-143,共8页Micronanoelectronic Technology

摘　　要：GaN基高电子迁移率晶体管(HEMT)在射频(RF)通信及新能源汽车领域有着巨大的应用潜力。TiN材料因其良好的热稳定性、化学稳定性及工艺兼容性,可用作GaN基HEMT的栅极材料。采用ULVAC公司生产的NE-550型电感耦合等离子体(ICP)刻蚀设备对TiN材料进行了干法刻蚀工艺的研究。采用光刻胶作为刻蚀掩膜,Cl_(2)和BCl_(3)混合气体作为工艺气体,通过调整工艺参数,研究了ICP源功率、射频(RF)偏压功率、腔体压力、气体体积流量以及载台温度对TiN刻蚀速率和侧壁角度的影响。最后通过优化工艺参数,得到了TiN刻蚀速率为333 nm/min,底部平整且侧壁角度为81°的栅极结构。GaN-based high electron mobility transistors(HEMTs)show great potential for radio frequency(RF)communication and new energy vehicle applications.TiN is supposed to be a good solution for GaN-based HEMT as gate metal material,owing to its favorable thermal and chemical stability and the processing compatibility.Inductively coupled plasma(ICP)etching equipment NE-550 manufactured by ULVAC was used to study the dry etching process of TiN material.Photoresist was used as the etching mask,Cl_(2) and BCl_(3) mixed gas was used as the process gas.By adjusting the process parameters,effects of ICP source power,RF bias power,chamber pressure,gas volume flow and stage temperature on the etching rate and sidewall angle of TiN were explored.Finally,by optimizing the process parameters,TiN etching rate of 333 nm/min,and the gate structure with a flat bottom and a sidewall degree of 81°are achieved.

关 键 词：氮化镓(GaN) 高电子迁移率晶体管(HEMT) 电感耦合等离子体(ICP)刻蚀 TIN Cl2和BCl3混合气体 栅极结构 新能源汽车 

分 类 号：TN305.7[电子电信—物理电子学]