基于GaAs pHEMT工艺的C波段低噪声放大器设计  

Design of C-band Low Noise Amplifier Based on GaAs pHEMT Process

作　　者：张先乐 孙登宝 彭轶瑶 齐晓琳 周聪 刘军[2] 苏国东[2] ZHANG Xianle;SUN Dengbao;PENG Yiyao;QI Xiaolin;ZHOU Cong;LIU jun;SU Guo-dong(Information Science Academy,China Electronics Technology Group Corporation,Beijing 100086,China;Key Laboratory of Large-scale Integrated Circuit DesignofZhejiang Province,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]中国电子科技集团公司,信息科学研究院,北京100086 [2]杭州电子科技大学,浙江省大规模集成电路设计重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2023年第6期7-12,19,共7页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：本文提出一款两级C波段(4-8 GHz)低噪声放大器(LNA)。电路中采用了电感退化拓扑与并联RLC负反馈结构,对电路的输入阻抗进行补偿,从而降低输入匹配的难度,提高了功率转换效率;并通过设计最佳噪声源阻抗点,在实现最佳噪声匹配同时,实现了较好的输入输出回波性能与增益平坦度。文中提出的LNA采用基于GaAs pHEMT工艺研制,测试结果表明,在工作频段内,电路的小信号增益为14.7±0.5 dB,最大噪声系数1.9 dB。In this paper,a two-stage C band(4-8GHz)low noise amplifier(LNA)is designed byusing the GaAs pHEMT process.Inductive degradation topology and parallel RLC negative feedback structure are added to the circuit to compensate for the input impedance of the circuit,thereby reduces the difficulty of input matching and improves power conversion efficiency.Through the design of optimal noise source impedance points,better input/output echo performance and gain flatness are achieved while achieving optimal noise matching.The test results indicate that within the operating frequency band,the small signal gain of the circuit is 14.7±0.5 dB,and the maximum noise coefficient is 1.9 dB.

关 键 词：GaAs pHEMT C波段 低噪声放大器 噪声匹配 

分 类 号：TN402[电子电信—微电子学与固体电子学]