基于GaAs pHEMT工艺的L波段高线性度混频器  

AL-band high linearity mixer Based on GaAs pHEMT Technology

作　　者：饶留铭 马平洋 高海军[1] RAO Liuming;MA Pingyang;GAO Haijun(Key Laboratory for RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学射频电路与系统教育部重点实验室,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2023年第6期83-91,共9页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：国家自然科学基金资助项目(61871161)。

摘　　要：采用0.25μm GaAs pHEMT工艺设计了一款L波段无源高线性度混频器。混频器由片上无源巴伦、本振驱动放大器及无源双平衡混频器核心组成,芯片尺寸为3.1 mm×2.1 mm×0.1 mm。测试结果表明,本振输入频率为800~1000 MHz,射频输入频率为960~1080 MHz时,相应的中频输出频率为0.1~250.0 MHz,变频损耗为9.5 dB,输入1 dB压缩点为19 dBm,功耗为0.24 W,单边带噪声系数小于11 dB,3个端口之间的隔离度都在33 dBc以上。A L-band passive high linearity mixer is designed using 0.25μm GaAs pHEMTtechnology.The mixer is composed of on-chip passive balun,local oscillator drive amplifier and passive double-balanced mixer core,with chip size of 3.1 mm×2.1 mm×0.1 mm.The test results show that when the LO input frequency is 800~1000 MHz and the RF input frequency is 960~1080 MHz,the corresponding IF output frequency is 0.1~250.0 MHz,the conversion loss is 9.5 dB,the input 1 dB compression point is 19 dBm,the power consumption is 0.24W,the singlesideband noise figure is less than 11 dB,and the isolation degree between the three ports is above 33 dBc.

关 键 词：无源双平衡混频器 巴伦 高线性度 

分 类 号：TN432[电子电信—微电子学与固体电子学]