Chalcogenide Ovonic Threshold Switching Selector  

作　　者：Zihao Zhao Sergiu Clima Daniele Garbin Robin Degraeve Geoffrey Pourtois Zhitang Song Min Zhu 

机构地区：[1]National Key Laboratory of Materials for Integrated Circuits,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,People’s Republic of China [2]University of Chinese Academy of Sciences,Beijing 100029,People’s Republic of China [3]IMEC,Kapedreef 75,Leuven,Belgium

出　　处：《Nano-Micro Letters》2024年第5期1-40,共40页纳微快报（英文版）

基　　金：M.Zhu acknowledges support by the National Outstanding Youth Program(62322411);the Hundred Talents Program(Chinese Academy of Sciences);the Shanghai Rising-Star Program(21QA1410800);The financial support was provided by the Strategic Priority Research Program of the Chinese Academy of Sciences(XDB44010200).

摘　　要：Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or DRAM.Intel Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising candidates.The Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent years.In this paper,we begin by providing a brief introduction to the discovery process of the OTS phenomenon.Subsequently,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material systems.Furthermore,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection models.Additionally,we review the progress and innovations in OTS mechanism research.Finally,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

关 键 词：Non-volatile memory Ovonic threshold switch(OTS) CHALCOGENIDE SELECTOR 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]