双阶梯型薄膜体声波谐振器有限元仿真分析  

Finite element simulation and analysis of double-stepped film bulk acoustic resonator

作　　者：周晓伟 吴秀山 孙坚 徐霖 ZHOU Xiaowei;WU Xiushan;SUN Jian;XU Lin(College of Mechanical and Electrical Engineering,China Jiliang University,Hangzhou 310018,China;College of Electrical Engineering,Zhejiang University of Water Resources and Electric Power,Hangzhou 310018,China)

机构地区：[1]中国计量大学机电工程学院,浙江杭州310018 [2]浙江水利水电学院电气工程学院,浙江杭州310018

出　　处：《电子元件与材料》2024年第1期97-103,共7页Electronic Components And Materials

基　　金：浙江省自然科学基金(LY21F040001)。

摘　　要：为了抑制薄膜体声波谐振器(FBAR)的寄生谐振同时满足5G通信的高频需求,基于Comsol Multiphysics仿真软件建立薄膜体声波谐振器的二维和三维有限元模型,研究了压电材料、电极横向尺寸和电极形状对寄生谐振的影响,并讨论了电极框架结构对FBAR并联谐振频率(f_(p))处的品质因数(Q_(p))的影响。基于分析,提出并设计了一种双阶梯电极框架结构的FBAR,该结构的FBAR以AlN为压电材料,电极形状为五边形,中心频率为3.504 GHz,串联谐振频率为3.467 GHz,并联谐振频率为3.541 GHz,Q_(p)为1591。Q_(p)与未优化的FBAR相比提高了19.2%,实现了对寄生谐振的有效抑制。To effectively suppress parasitic resonance in film bulk acoustic resonator(FBAR)and meet the high frequency requirement of 5G communication,two-dimensional and three-dimensional finite element models of the FBAR were established using Comsol Multiphysics software.Analysis was performed to understand the effect of piezoelectric materials,transverse electrode sizes and electrode shapes on the parasitic resonance of the FBAR.Furthermore,it discussed the impact of electrode frame structures on the quality factor(Q_(p))at the FBAR parallel resonant frequency(f_(p)).Based on the analysis,a double-step electrode frame structured FBAR was proposed and designed.The FBAR utilizes AlN as the piezoelectric material,and it features a pentagonal electrode shape.The central frequency of the FBAR is 3.504 GHz with serial resonance frequency of 3.467 GHz,parallel resonance frequency of 3.541 GHz,and Q_(p)value of 1591.Compared with the unoptimized one,the Q_(p)value is improved by 19.2%,which effectively suppresses the parasitic resonance.

关 键 词：薄膜体声波谐振器 有限元仿真 寄生谐振 谐振频率 双阶梯结构 品质因数 

分 类 号：TN751.2[电子电信—电路与系统]