界面工程与等离激元效应协同作用增强的ZnO微米线同质结自驱动紫外探测器  

Boosting performances of ZnO microwire homojunction ultraviolet selfpowered photodetector by coupled interfacial engineering and plasmonic effects

作　　者：唐楷 沙树林 万鹏 翟亚林 阚彩侠 施大宁 姜明明 Kai Tang;Shulin Sha;Peng Wan;Yalin Zhai;Caixia Kan;Daning Shi;Mingming Jiang(College of Physics,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China)

机构地区：[1]College of Physics,MIIT Key Laboratory of Aerospace Information Materials and Physics,Key Laboratory for Intelligent Nano Materials and Devices,Nanjing University of Aeronautics and Astronautics,Nanjing 211106,China

出　　处：《Science China Materials》2024年第3期842-851,共10页中国科学（材料科学）（英文版）

基　　金：supported by the National Natural Science Foundation of China(11974182,12374257);the Fundamental Research Funds for the Central Universities(NC2022008);the Funding for Outstanding Doctoral Dissertation of Nanjing University of Aeronautics and Astronautics(NUAA)(BCXJ22-14);the Postgraduate Research&Practice Innovation Program of Jiangsu Province(KYCX22_0326)。

摘　　要：高灵敏度的自驱动紫外探测器在许多应用中都大有可为.本研究提出了一种一维ZnO基同结光电探测器,它包括表面覆盖着Ag纳米线的锑掺杂ZnO微米线(AgNWs@ZnO:Sb MW)、MgO缓冲纳米层和ZnO薄膜.该探测器在0 V偏压下对紫外光非常敏感,其性能参数包括约7个量级的开关比、292.2 mA W^(-1)的响应度、6.9×10^(13)Jones的比探测率,以及微秒量级的快速响应速度(上升时间16.4μs,下降时间465.1μs).特别是10μW cm^(-2)的微弱紫外光时接近99.3%的外量子效率.此外,本文系统研究了MgO纳米薄膜和表面修饰AgNWs对探测器件性能增强的机理.作为自驱动光接收器,该光电二极管被进一步集成到能够实时传输信息的紫外通信系统中.此外,基于AgNWs@p-ZnO:Sb MW/i-MgO/n-ZnO的同质结9×9阵列显示出均匀的光响应分布,可用作具有良好空间分辨率的成像传感器.这项研究有望为设计高性能紫外光检测器提供一条具有低功耗和可大规模建造的途径.A highly sensitive self-biased ultraviolet(UV)photodetector is largely desirable in practical applications.This work develops a one-dimensional ZnO homojunction photodiode, which includes an Sb-doped ZnO microwire with surface-covered by Ag nanowires(AgNWs@ZnO:Sb MW), a MgO buffer nanolayer, and a ZnO film. The photodiode is dramatically sensitive to UV light, with its photosensitive performances of a large on/off ratio of approximately 107, a maximum responsivity of 292.2 mA W^(-1), a high specific detectivity of 6.9 × 10^(13)Jones, and a rapid response speed in microseconds(16.4/465.1 μs) under 365-nm light illumination via 10 μW cm^(-2)at 0 V bias. In particular, the highest external quantum efficiency approaching 99.3% is achieved. The modulation of the MgO nanofilm and surface-modified AgNWs on the improved photoresponse was carefully examined. Acting as a self-biased optical receiver, this photodiode was further integrated into a UV communication system that can transmit information in real time. Also, a 9 × 9photodetector array based on the AgNWs@p-ZnO:Sb MW/i-MgO/n-ZnO homojunction exhibited a uniform distribution of light response and could be used as a workable photosensory to achieve good spatial resolution images. This work proposes a promising route for the design of high-performance UV photodetectors for realistic applications with low power consumption and large-scale construction.

关 键 词：interface engineering p-type ZnO:Sb microwire selfpowered photodetector imaging sensor UV optical communication plasmonic effect 

分 类 号：TN23[电子电信—物理电子学] TQ132.41[化学工程—无机化工]