Tunable magneto-Seebeck effect in Co_(2)FeSi/MgO/Co_(2)FeSi heterostructure via optimized interfacial engineering  

作　　者：Jingyu Li Xianbiao Shi Yurong Jin Le Ma Liuming Wei Chi Zhang Hang Li Peng-Fei Liu 

机构地区：[1]International Joint Research Laboratory of New Energy Materials and Devices of Henan Province,School of Physics and Electronics,Henan University,Kaifeng 475004,China [2]Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100049,China [3]Spallation Neutron Source Science Center,Dongguan 523803,China [4]Defence Industry Secrecy Examination and Certification Center,Beijing 100089,China [5]School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China [6]Department of Network Security,Henan Police College,Zhengzhou 450046,China [7]College of Electrical Engineering,Henan University of Technology,Zhengzhou 450001,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2024年第3期128-135,共8页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 12104458);Foshan (Southern China) Institute for New Materials (Grant No. 2021AYF25021)。

摘　　要：Enhancing the tunneling magneto-Seebeck(TMS) ratio and uncovering its underlying mechanism are greatly demanded in spin caloritronics.The magnitude and sign of the TMS effect depend on the type of atom and the stacking order of atoms at the interfaces.Herein,we demonstrate that TMS ratios can be effectively manipulated by altering heterogonous or homogeneous interface through decoration on the CoFeSi(001) surface inserted on the MgO insulating layers.The maximum TMS ratio of pure Co_(2)/O termination is 4565% at 800 K.Notably,the TMS ratio of the FeSi/O termination has two peak values,of which the maximum could reach up to-3290% at 650 K.By comparing two different atom arrangements at the interface,we reveal that the sign and symbol of the TMS ratio can be controlled by the temperature and different atomic configurations at the Co_(2)FeSi/MgO interface.Furthermore,the spin-Seebeck coefficient up to ~150 μV/K is also possible when we select suitable terminations and temperatures.These findings will provide useful insights into how to control the sign and symbol of the TMS ratio and accordingly stimulate the development field of magneto-thermoelectric power and spin caloritronic devices based on the magneto-Seebeck effect in Heusler-based metallic multilayers.

关 键 词：magneto-Seebeck effect interface SPINTRONICS electronic structure spin-Seebeck effect 

分 类 号：O469[理学—凝聚态物理]