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作 者:Jinrong WANG Shuang'e WU Chengdong MI Yaner QIU Xin'ai BAI
机构地区:[1]Department of Physics,Lyuliang University,Lvliang,033001,China [2]Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques,South China University of Technology,Guangzhou,510640,China
出 处:《Frontiers of Information Technology & Electronic Engineering》2024年第2期316-322,共7页信息与电子工程前沿(英文版)
基 金:Project supported by the Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi(STIP)(Nos.2021L562 and 2022L573);the Key Research and Development Projects for Attarcting High-Level Scientific and Technological Talents to Lvliang City(No.2021RC-2-27);the Open Fund of the Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques(South China University of Technology)(No.2021-06);the Key Research and Development Projects in the Field of Social Development of Lvliang City(No.2022SHFZ43);Higher Education Reform and Innovation Project of Shanxi Province,China(Nos.J2021718,J2021744,and J2021717);the Innovation and Entrepreneurship Training Program for College Students,China(No.202310812012)。
摘 要:We demonstrate a low-noise,high-gain,and large-dynamic-range photodetector(PD)based on a junction field-effect transistor(JFET)and a charge amplifier for the measurement of quantum noise in Bell-state detection(BSD).Particular photodiode junction capacitance allows the silicon N-channel JFET 2sk152 to be matched to the noise requirement for charge amplifier A250.The electronic noise of the PD is effectively suppressed and the signal-to-noise ratio(SNR)is up to 15 dB at the analysis frequency of 2.75 MHz for a coherent laser power of 50.08µW.By combining of the inductor and capacitance,the alternating current(AC)and direct current(DC)branches of the PD can operate linearly in a dynamic range from 25.06µW to 17.50 mW.The PD can completely meet the requirements of SNR and dynamic range for BSD in quantum optics experiments.
关 键 词:Quantum noise Bell-state detection(BSD) Photodetector(PD) Junction field-effect transistor(JFET) Charge amplifier
分 类 号:TN382[电子电信—物理电子学] TN722
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