W频段固态气密功率放大器设计  

A solid-state power amplifier for W band airtight application

作　　者：余小辉[1] 冯思润 马战刚[1] Yu Xiaohui;Feng Sirun;Ma Zhangang(China Electronics Technology Group Corporation 13th Research Institute,Shijiazhuang 050000,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050000

出　　处：《电子技术应用》2024年第2期83-87,共5页Application of Electronic Technique

摘　　要：针对3 mm频段功率合成的需要,基于波导气密结构设计了一种8合1放大器,实现了W波段瓦级的功率输出。利用硅基芯片实现了模块的气密,创新地解决了W频段波导的气密需求。本合路结构基于波导合路原理,并对内部结构进行了电磁分析。而后使用高频仿真软件进行了建模、仿真,对比分析仿真结果与实物测试结果,表明该W频段基于波导气密结构的功率合成放大器的指标可满足设计要求。In order to meet the power combination requirements of 3 mm band,a novel 8 in 1 high power amplifier,which works at watt level for W band use,is proposed.It achieves module airtightness by utilizing silicon based chips,which is an innovative way for W-band waveguides.The conbiner design is based on the waveguides and the electromagnetic analysis is conducted for the inner structures.High frequency simulating softwares are also used to simulate the power combiner.By comparing the tested results and simulated indicators,this W-band power amplifier based on airtight waveguides can meet all the design requirements.

关 键 词：气密波导 功率合成器 电磁场 

分 类 号：TN73[电子电信—电路与系统]