多级触发脉冲电弧源技术制备掺氮ta-C薄膜的力学性能研究  

Study on Mechanical Properties of Nitrogen-doped ta-C Thin Films Prepared by Multi-stage Triggered Pulsed Arc Source Technology

作　　者：赵栋才 马占吉[2] 刘兴光 郑军[1,3] 张子扬 ZHAO Dongcai;MA Zhanji;LIU Xingguang;ZHENG Jun;ZHANG Ziyang(Key Laboratory of Green Fabrication and Surface Technology of Advanced Metal Materials,Ministry of Education,Anhui University of Technology,Maanshan 243002;Lanzhou Institute of Physics,Lanzhou 730000;School of Materials Science and Engineering,Anhui University of Technology,Maanshan 243000)

机构地区：[1]安徽工业大学先进金属材料绿色制备与表面技术教育部重点实验室,马鞍山243002 [2]兰州空间技术物理研究所,兰州730000 [3]安徽工业大学材料科学与工程学院,马鞍山243000

出　　处：《机械工程学报》2023年第24期108-117,共10页Journal of Mechanical Engineering

基　　金：安徽省重点研究与开发计划(202004b11020011);安徽省高等学校自然科学研究(KJ2021A0392)资助项目。

摘　　要：多级触发脉冲电弧源技术指由前一级电弧放电引发后一级电弧放电的技术,具有高真空下工作、瞬时电流高达上万安培和有效过滤大颗粒等特点,因而非常适合于ta-C薄膜的制备。本研究通过在制备过程中引入氮气,在室温条件下制备了含氮ta-C薄膜。研究发现:当气压从本底真空升高至1.3×10^(-2)Pa时,膜层中的N原子分数从0%升至8.9%左右,随后不再随氮气分压的增加而呈现严格的增加关系。膜层中掺杂的N和C发生了化学反应,生成了sp^(2)态和sp^(3)态的C-N,膜层残余压应力明显下降,硬度略有降低。当沉积气压从3.7×10^(-2)Pa逐步升高至6.0×10^(-1)Pa时,虽然薄膜氮含量并未增加,但其sp^(2)含量逐渐增多,sp^(3)含量逐渐降低,导致膜层硬度和应力逐步降低。在氮原子百分比含量低于8.9%时,薄膜的摩擦因数在0.14~0.15之间,随后随着沉积气压的升高由0.15增长至0.5。最后在钛合金基体上制备了含氮ta-C薄膜,摩擦因数为0.14~0.15,综合性能优异。Multistage trigger pulse arc source technology refers to the technology that the previous arc discharge triggers the subsequent arc discharge.It has the characteristics of working in high vacuum,instantaneous current of tens of thousands of amperes,and effective filtration of large particles,therefore,it is very suitable for the preparation of ta-C.Here,nitrogen doped ta-C films were prepared at room temperature by introducing nitrogen into the preparation process.It is found that when the vacuum pressure rises from the background vacuum to 1.3×10^(-2)Pa,the percentage content of N atoms in the film increases from 0%to about 8.9%,subsequently,it does not show a strict increasing relationship with the increase of nitrogen partial pressure.The doped N and C in the film react chemically to form sp^(2) and sp^(3).The stress of the film decreases obviously,and the hardness also decreases,but the decrease range is small.When the deposition pressure increases from 3.7×10^(-2)Pa to 6.0×10^(-1)Pa,although the nitrogen content in the film did not increase,the content of sp^(2) in the film gradually increased and the content of sp^(3) gradually decreased,which also caused the decrease of hardness and stress of the film.When the percentage of nitrogen atoms is lower than 8.9%,the friction coefficient of the films is between 0.14 and 0.15,and then increases from 0.15 to 0.5 with the increase of deposition pressure.Finally,the nitrogen-containing ta-C films were prepared on the titanium alloy substrate.In addition to the high hardness and high adhesion,the friction coefficient was 0.14-0.15,and the properties are excellent.

关 键 词：TA-C 掺氮 压应力 硬度 摩擦因数 

分 类 号：TB43[一般工业技术]