Layer Hall effect induced by hidden Berry curvature in antiferromagnetic insulators  

作　　者：Rui Chen Hai-Peng Sun Mingqiang Gu Chun-Bo Hua Qihang Liu Hai-Zhou Lu X.C.Xie 

机构地区：[1]Shenzhen Institute for Quantum Science and Engineering and Department of Physics,Southern University of Science and Technology(SUSTech),Shenzhen 518055,China [2]International Quantum Academy,Shenzhen 518048,China [3]Institute for Theoretical Physics and Astrophysics,University of Wurzburg,Wurzburg 97074,Germany [4]School of Electronic and Information Engineering,Hubei University of Science and Technology,Xianning 437100,China [5]Guangdong Provincial Key Laboratory of Computational Science and Material Design,Southern University of Science and Technology,Shenzhen 518055,China [6]Shenzhen Key Laboratory of Quantum Science and Engineering,Shenzhen 518055,China [7]International Center for Quantum Materials,School of Physics,Peking University,Beijing 100871,China [8]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China [9]CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China

出　　处：《National Science Review》2024年第2期10-18,共9页国家科学评论（英文版）

基　　金：supported by the National Key R&D Program of China (2022YFA1403700 and 2020YFA0308900);the National Natural Science Foundation of China (11925402 and 11874195);the National Basic Research Program of China(2015CB921102);the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB28000000);the Basic Science Center Project of National Natural Science Foundation of China (51788104);the Guangdong College Innovation Team (2016ZT06D348 and 2020KCXTD001);the Shenzhen High-level Special Fund (G02206304 and G02206404);the Guangdong Provincial Key Laboratory for Computational Science and Material Design (2019B030301001);the Science,Technology and Innovation Commission of Shenzhen Municipality (ZDSYS20170303165926217, JCYJ20170412152620376 and KYTDPT20181011104202253);support from the project funded by the China Postdoctoral Science Foundation (2019M661678);the SUSTech Presidential Postdoctoral Fellowship;supported by the Natural Science Foundation of Guangdong Province (2021A1515110389);the Science Technology and Innovation Commission of Shenzhen Municipality (JCYJ20210324104812034);the Foundation for Distinguished Young Talents in Higher Education of Guangdong Province (2020KQNCX064)

摘　　要：The layer Hall effect describes electrons spontaneously deflected to opposite sides at different layers,which has been experimentally reported in the MnBi_(2)Te_(4) thin films under perpendicular electric fields.Here,we reveal a universal origin of the layer Hall effect in terms of the so-called hidden Berry curvature,as well as material design principles.Hence,it gives rise to zero Berry curvature in momentum space but non-zero layer-locked hidden Berry curvature in real space.We show that,compared to that of a trivial insulator,the layer Hall effect is significantly enhanced in antiferromagnetic topological insulators.Our universal picture provides a paradigm for revealing the hidden physics as a result of the interplay between the global and local symmetries,and can be generalized in various scenarios.

关 键 词：layer Hall effect hidden Berry curvature antiferromagnetic insulator axion insulator quantum transport 

分 类 号：O469[理学—凝聚态物理]