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作 者:Runzhe Xu Lixuan Xu Zhongkai Liu Lexian Yang Yulin Chen
机构地区:[1]State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China [2]School of Physical Science and Technology,ShanghaiTech University and CAS-Shanghai Science Research Center,Shanghai 201210,China [3]ShanghaiTech Laboratory for Topological Physics,Shanghai 200031,China [4]Frontier Science Center for Quantum Information,Beijing 100084,China [5]Collaborative Innovation Center of Quantum Matter,Beijing 100871,China [6]Department of Physics,Clarendon Laboratory,University of Oxford,Parks Road,Oxford OX13PU,UK
出 处:《National Science Review》2024年第2期76-88,共13页国家科学评论(英文版)
基 金:the support from the National Natural Science Foundation of China (12274251);the National Key R&D Program of China (2017YFA0305400);the support from the Oxford-ShanghaiTech collaboration project;the Shanghai Municipal Science and Technology Major Project (2018SHZDZX02)
摘 要:In the past 5 years,there has been significant research interest in the intrinsic magnetic topological insulator family compounds MnBi_(2+2n)Te_(4+3n)n(where n=0,1,2…).In particular,exfoliated thin films of MnBi_(2)Te_(4)have led to numerous experimental breakthroughs,such as the quantum anomalous Hall effect,axion insulator phase and high-Chern number quantum Hall effect without Landau levels.However,despite extensive efforts,the energy gap of the topological surface states due to exchange magnetic coupling,which is a key feature of the characteristic band structure of the system,remains experimentally elusive.The electronic structure measured by using angle-resolved photoemission(ARPES)shows significant deviation from ab initio prediction and scanning tunneling spectroscopy measurements,making it challenging to understand the transport results based on the electronic structure.This paper reviews the measurements of the band structure of MnBi_(2+2n)Te_(4+3n)n magnetic topological insulators using ARPES,focusing on the evolution of their electronic structures with temperature,surface and bulk doping and film thickness.The aim of the review is to construct a unified picture of the electronic structure of MnBi_(2+2n)Te_(4+3n)n compounds and explore possible control of their topological properties.
关 键 词:magnetic topological insulator MnBi_(2)Te_(4) electronic structure angle-resolved photoemission spectroscopy
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