InGaN multiple quantum well based light-emitting diodes with indium composition gradient InGaN quantum barriers  

作　　者：SANG Xien XU Yuan YIN Mengshuang WANG Fang LIOU Juin J LIU Yuhuai 

机构地区：[1]National Center for International Joint Research of Electronic Materials and Systems,International Joint-Laboratory of Electronic Materials and Systems of Henan Province,School of Electrical and Information Engineering,Zhengzhou University,Zhengzhou 450001,China [2]Institute of Intelligence Sensing,Zhengzhou University,Zhengzhou 450001,China [3]Research Institute of Industrial Technology Co.,Ltd.,Zhengzhou University,Zhengzhou 450001,China [4]Zhengzhou Way Do Electronics Co.,Ltd.,Zhengzhou 450001,China [5]School of Electrical and Information Engineering,North Minzu University,Yinchuan 750001,China1

出　　处：《Optoelectronics Letters》2024年第2期89-93,共5页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.62174148);the National Key Research and Development Program(Nos.2022YFE0112000 and 2016YFE0118400);the Key Program for International Joint Research of Henan Province(No.231111520300);the Ningbo Major Project of‘Science,Technology and Innovation 2025’(No.2019B10129);the Zhengzhou 1125 Innovation Project(No.ZZ2018-45)。

摘　　要：To improve the internal quantum efficiency(IQE)and light output power of In Ga N light-emitting diodes(LEDs),we proposed an In-composition gradient increase and decrease In Ga N quantum barrier structure.Through analysis of its P-I graph,carrier concentration,and energy band diagram,the results showed that when the current was 100 m A,the In-composition gradient decrease quantum barrier(QB)structure could effectively suppress electron leakage while improving hole injection efficiency,resulting in an increase in carrier concentration in the active region and an improvement in the effective recombination rate in the quantum well(QW).As a result,the IQE and output power of the LED were effectively improved.

关 键 词：DIODES QUANTUM GRADIENT 

分 类 号：TN312.8[电子电信—物理电子学]