Tuning the band gap of the CIGS solar buffer layer Cd_(1-x)Zn_(x)S(x=0—1) to achieve high efficiency  

作　　者：TAN Zhiyuan XUE Yuming DAI Hongli WANG Luoxin HU Xiaofeng BAI Xin 

机构地区：[1]Institute of New Energy Intelligence Equipment,School of Integrated Circuit Science and Engineering,Tianjin University of Technology,Tianjin 300384,China

出　　处：《Optoelectronics Letters》2024年第2期100-106,共7页光电子快报（英文版）

基　　金：supported by the Science and Technology Innovation Development Program (No.70304901)。

摘　　要：To evaluate the impact of zinc sulfate(ZnSO_(4)) concentration on the structural properties of the films,Cd_(1-x)Zn_(x)S thin films were formed on glass substrates using chemical bath deposition(CBD) in this study.The effect of ZnSO_(4) precursor concentration on the surface morphology,optical properties,and morphological structure of the Cd_(1-x)Zn_(x)S films was investigated.To study the impact of zinc doping content on the performance metrics of Cu(In_(1-x)Ga_(x))Se_(2)(CIGS)cells in the experimental group and to improve the buffer layer thickness,simulations were run using one-dimensional solar cell capacitance simulator(SCAPS-1D) software.

关 键 词：CIGS (x) LAYER 

分 类 号：TM914.4[电气工程—电力电子与电力传动]