基于GaN/(BA)_(2)PbI_(4)异质结的自供电双模式紫外探测器  

Self-powered dual-mode UV detector based on GaN/(BA)_(2)PbI_(4)heterojunction

作　　者：张盛源 夏康龙 张茂林 边昂 刘增 郭宇锋[1] 唐为华 Zhang Sheng-Yuan;Xia Kang-Long;Zhang Mao-Lin;Bian Ang;Liu Zeng;Guo Yu-Feng;Tang Wei-Hua(College of Integrated Circuit Science and Engineering(Industry-Education Integration School),Nanjing University of Posts and Telecommunications,Nanjing 210023,China;School of Science,Jiangsu University of Science and Technology,Zhenjiang 212100,China;Hangzhou Xiaoshan Technician College,Hangzhou 311201,China)

机构地区：[1]南京邮电大学集成电路科学与工程学院(产教融合学院),南京210023 [2]江苏科技大学理学院,镇江212100 [3]杭州萧山技师学院,杭州311201

出　　处：《物理学报》2024年第6期323-330,共8页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2022YFB3605404);国家自然科学基金联合基金(批准号:U23A20349)、国家自然科学基金青年科学基金(批准号:62204125,62304113,62305135);南京邮电大学引进人才科研启动基金(自然科学)(批准号:XK1060921115,XK1060921002)资助的课题。

摘　　要：紫外探测器作为智能光电系统的重要组成部分,近年来在诸多领域应用广泛,其中自供电异质结光电二极管的研究显得尤为重要.本文制备并讨论了一种双模式运行的GaN/(BA)_(2)PbI_(4)异质结紫外光电二极管.通过金属有机化学气相沉积法在蓝宝石上沉积GaN薄膜,再在GaN薄膜表面旋涂(BA)_(2)PbI_(4)薄膜,用于构建平面异质结探测器.当在+5 V偏压驱动、光强为421μW/cm^(2)的365 nm紫外光照射下,响应度(R)和外量子效率(EQE)分别为60 mA/W和20%.在自供电模式下,上升时间(τ_(r))和衰减时间(τ_(d))分别为0.12 s和0.13 s.这些结果共同证明了基于GaN/(BA)_(2)PbI_(4)异质结的自供电紫外光电二极管拥有旷阔的发展前景,为智能光电系统的发展提供了新的思路.As an important part of an intelligent photoelectric system,ultraviolet detector has been widely used in many fields in recent years.The research on self-powered heterojunction photodiode is particularly important.In this work,a dual-mode self-powered GaN/(BA)_(2)PbI_(4)heterojunction ultraviolet photodiode is prepared and discussed.The GaN film is deposited on sapphire by metal-organic chemical vapor deposition,and then the(BA)_(2)PbI_(4)film is spin-coated onto the surface of the GaN film to construct a planar heterojunction detector.The X-ray diffraction,energy-dispersive X-ray spectroscopy mapping and scanning electron microscope measurements are used to determine the quality of GaN and(BA)_(2)PbI_(4)thin films.When the film is illuminated by 365 nm light with a power density of 421μW/cm^(2)at 5 V bias,the responsiveness(R)and external quantum efficiency(EQE)are 60 mA/W and 20%,respectively.In self-powered mode,the rise time(τr)and decay time(τd)are 0.12 s and 0.13 s,respectively,illustrating the fast photogeneration process and recombination process for photo-excited electron-hole pairs.And,the R is 1.96×10^(-4)mA/W,owing to the development of space charge region across the interface of GaN thin film and(BA)_(2)PbI_(4)thin film.The outcomes of this study unequivocally demonstrate the extensive potential and wide-ranging applicability of self-powered UV photodiodes based on the GaN/(BA)_(2)PbI_(4)heterojunction configuration.Moreover,this research presents a new concept that provides a novel avenue to the ongoing development of intelligent optoelectronic systems.

关 键 词：宽禁带半导体 钙钛矿 异质结 自供电紫外探测器 

分 类 号：TN23[电子电信—物理电子学]