工艺参数、退火温度对钽氮化物薄膜生长速率、相结构及电学性能的影响  

Effects of process parameters and annealing temperature on growth rate,phase structure and electrical properties of tantalum nitride films

作　　者：李海鸥[1,2] 牟凯瑞 刘兴鹏 杨曌 LI Haiou;MOU Kairui;LIU Xingpeng;YANG Zhao(Guangxi Key Laboratory of Precision Navigation Technology and Application,Guilin University of Electronic Technology,Guilin 541004,China;State Key Laboratory of Advanced Materials and Electronic Components,Guangdong Fenghua Advanced Technology Holding Co.Ltd.,Zhaoqing 526060,China)

机构地区：[1]桂林电子科技大学广西精密导航技术与应用重点实验室,广西桂林541004 [2]广东风华高新科技股份有限公司新型电子元器件关键材料与工艺国家重点实验室,广东肇庆526060

出　　处：《桂林电子科技大学学报》2023年第6期486-492,共7页Journal of Guilin University of Electronic Technology

基　　金：新型电子元器件关键材料与工艺国家重点实验室开放基金(FHR-JS-201909007)。

摘　　要：钽氮化物(TaNx)因其优秀的物理、化学稳定性及低电阻温度系数(TCR)等特性被广泛运用于薄膜电阻材料。采用反应磁控溅射设备在Si(100)基片上制备钽氮化物(TaNx)薄膜,通过调节不同溅射参数,对比研究了氩氮总流量、氮气含量、溅射功率等条件对薄膜的影响。通过台阶仪、XRD、电学测试等方式表征其薄膜沉积速率、薄膜结构、TCR及电阻率,并总结其影响规律。实验结果表明,薄膜溅射过程中氩氮总流量、氮气含量、溅射功率等工艺参数均会对TaNx薄膜沉积速率产生明显影响;同时工艺参数还会直接改变薄膜的物相结构,影响薄膜结晶质量,从而带来薄膜TCR与电阻率的变化。此外,通过调节退火温度,探究了真空退火温度对薄膜性质的改变规律,并通过SEM表征薄膜形貌。实验结果表明,退火有效提高了薄膜晶粒尺寸,促进了薄膜二次结晶;退火温度的上升使得TaN(111)相强度增大,并在达到300℃后出现TaN(200)相与TaN(111)相;随着退火温度提高,薄膜电阻率呈上升趋势,薄膜TCR的绝对值先减小后增加,在退火温度达到800℃时,膜层出现明显开裂。研究结果表明,通过控制调整制膜工艺可改善TaNx电阻薄膜的沉积速率、物相结构与电学性能。Tantalum nitride(TaNx)is widely used in thin-film resistance materials due to its excellent physical and chemical stability and low resistance temperature coefficient(TCR).Tantalum nitride(TaNx)thin films were prepared on Si(100)substrate by reactive magnetron sputtering equipment.The effects of the total flow rate of argon nitrogen,nitrogen content,and sputtering power on the thin films were studied by adjusting different sputtering parameters.The film deposition rate,film structure,TCR,and resistivity were characterized by step profiler,XRD,and electrical test,and the influence law was summarized.The experimental results show that the total flow rate of argon nitrogen,nitrogen content,sputtering power,and other technological parameters have significant ef-fects on the deposition rate of TaNx films.The process parameters will directly change the phase structure of the film,affect the crys-tal quality of the film,and thus bring about the change of TCR and resistivity of the film.In addition,by adjusting the annealing tem-perature,the change rule of the vacuum annealing temperature on the properties of the film was explored,and the morphology of the film was characterized by SEM.The results show that annealing can effectively improve the grain size and promote the secondary crystallization of thin films.The strength of the TaN(111)phase increases with the increase of annealing temperature,and the TaN(200)phase and TaN(111)phase appear at 300℃.With the increase of annealing temperature,the resistivity of thin-film in-creases,and the absolute value of TCR decreases first and then increases.When the annealing temperature reaches 800℃,the film cracks obviously.The results show that the deposition rate,phase structure,and electrical properties of TaNx resistance films can be improved by adjusting the film-making process.

关 键 词：TaN薄膜 磁控溅射 薄膜结构 电阻温度系数(TCR) 退火 

分 类 号：O484.42[理学—固体物理]