高Al组分AlGaN/AlN/GaN量子级联结构的MOCVD外延研究  

Study on MOCVD Epitaxy of High Al Component AlGaN/AlN/GaN Quantum Cascade Structure

作　　者：吴粤川 邓文娟[1] WU Yuechuan;DENG Wenjuan(School of Mechanical and Electronic East China University of Technology,Jiangxi 330013,China)

机构地区：[1]东华理工大学机械与电子工程学院,江西330013

出　　处：《电子技术（上海）》2024年第1期1-4,共4页Electronic Technology

基　　金：国家自然科学基金(61961001)。

摘　　要：阐述高Al组分差的GaN/AlN/AlGaN量子级联紫外-红外双色探测结构的设计,并用MOCVD外延实现过程。通过MOCVD监控分析GaN/AlN/AlGaN量子级联结构生长状况,发现外延AlGaN层的整体Al组分偏低。随后用SEM观测样品表面形貌存在凸起,从截面测量各个结构厚度符合设计,用Cary7000分光光度计测试得到279nm以及1 700~1 900nm双色吸收峰。This paper describes the design of a GaN/AlN/AlGaN quantum cascade ultraviolet infrared dual color detection structure with high Al component difference,and the implementation process using MOCVD epitaxy.Through MOCVD monitoring and analysis of the growth status of GaN/AlN/AlGaN quantum cascade structures,it was found that the overall Al composition of the epitaxial AlGaN layer was low.Subsequently,SEM was used to observe the surface morphology of the sample with protrusions.The thickness of each structure was measured from the cross-section,which met the design requirements.The Cary7000 spectrophotometer was used to test and obtain dual color absorption peaks at 279nm and 1 700~1 900nm.

关 键 词：电子器件设计 量子级联 MOCVD 紫外-红外探测 SEM 高Al组分 

分 类 号：TN215[电子电信—物理电子学] TN405