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作 者:高志廷 马壮[1,2] 柳彦博 GAO Zhiting;MA Zhuang;LIU Yanbo(School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081,China;Chongqing Innovation Center,Beijing Institute of Technology,Chongqing 401120,China)
机构地区:[1]北京理工大学材料科学与工程学院,北京100081 [2]北京理工大学重庆创新中心,重庆401120
出 处:《航空学报》2024年第3期261-274,共14页Acta Aeronautica et Astronautica Sinica
基 金:国家重点研发计划(2022YFE0121200);国家自然科学基金(51772027)。
摘 要:采用飞秒激光在化学气相沉积(CVD)-SiC中间层表面制备不同尺寸的阵列,研究了阵列结构对ZrB_(2)/SiC涂层性能的影响。结果表明,随着激光刻蚀频次的增大,阵列结构的深度从30μm增大到150μm。采用氧乙炔烧蚀600 s,ZrB_(2)/SiC涂层烧蚀表面温度随CVD-SiC微结构深度增大而逐步降低,最低的表面温度达到1700℃,下降了约200℃。烧蚀中心区域的颜色从白色过渡到浅灰色。对于激光刻蚀频次为5的试样,在600 s的单次烧蚀后,质量烧蚀率和线性烧蚀率分别为-7.4×10^(-5)g/s和-13.3μm/s。阵列结构增大了ZrB_(2)/SiC涂层与CVD-SiC中间层的接触面积,从而增强了导热性能,减少了热积聚,进而改善了ZrB_(2)/SiC涂层的抗烧蚀性能。Influence of array structure on the performance of ZrB_(2)/SiC coatings was studied by using femtosecond la⁃ser to prepare arrays with different sizes on the surface of the Chemical Vapor Deposition(CVD)-SiC interlayer.Re⁃sults showed that with the increase of laser etching frequency,the depth of the array structure increased from 30μm to 150μm.After 600 s of oxyacetylene combustion,the surface temperature of the ZrB_(2)/SiC coating decreased gradually with the increase of CVD-SiC microstructure depth,and the lowest surface temperature reached 1700℃,which de⁃creased by nearly 200℃.The color of the combustion center area transitioned from white to light gray.For the samples with an etching frequency of 5 times,after a single cycle of 600 s,the mass combustion rate and linear com⁃bustion rate were-7.4×10^(−5) g/s and-13.3μm/s respectively.The array structure increased the contact area be⁃tween the ZrB_(2)/SiC coating and the CVD-SiC interlayer,thereby increasing the thermal conductivity,reducing heat ac⁃cumulation,and ultimately enhancing the anti-combustion performance of the ZrB_(2)/SiC coating.
关 键 词:阵列结构 烧蚀 等离子喷涂 C/C复合材料 CVD-SiC 激光刻蚀
分 类 号:V259[一般工业技术—材料科学与工程]
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