面向可调谐微波应用的Ba_(x)Sr_(1-x)TiO_(3)铁电薄膜材料与器件研究进展  

Research Progress on Ba_(x)Sr_(1-x)TiO_(3) Ferroelectric Thin Film Materials and Devices for Tunable Microwave Applications

作　　者：沈德坤 杨淄涵 郭沛源 赵梦玲 葛健 邓功勋 王爱记 SHEN Dekun;YANG Zihan;GUO Peiyuan;ZHAO Mengling;GE Jian;DENG Gongxun;WANG Aiji(Key Laboratory of Multiscale Spin Physics,Ministry of Education,Beijing Normal University,Beijing 100865,China;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]北京师范大学多尺度自旋物理教育部重点实验室,北京师范大学物理学系,北京100875 [2]中国科学院物理研究所,北京100190

出　　处：《硅酸盐学报》2024年第1期229-239,共11页Journal of The Chinese Ceramic Society

基　　金：国家重点研发计划(2021YFA0718700)。

摘　　要：可调谐微波器件是相控阵雷达和现代移动通信技术的重要技术核心,具有广阔的应用前景和市场需求。Ba_(x)Sr_(1-x)TiO_(3)铁电薄膜材料因其高介电可调性和快速的场响应而被认为是可调谐微波器件最有前途的材料之一。目前,人们对该材料降低介质损耗和提升介电可调性方面的研究取得了众多进展。综述了近年来国内外有关Ba_(x)Sr_(1-x)TiO_(3)铁电薄膜的介电性能研究以及其在可调谐微波器件的发展现状,并探讨了其研究中所存在的主要问题及未来研究重点。Conventional metal materials affect the development of microwave integrated circuits,while the use of microwave electric materials can achieve the miniaturization and high-performance requirements.With the continuous exploration of modern microwave communication technology,microwave devices will face some opportunities and challenges like multi-frequency,and multi-mode capabilities.Tunable microwave devices are also an essential core of phased array radar and modern mobile technology,with the broad application prospects.Ba_(x)Sr_(1-x)TiO_(3) (BST) film material is considered as one of the most materials for tunable microwave devices due to its high dielectric tunability and low dielectric loss with a high figure of merit (FOM).However,BST thin film material still has some problems in applications,such as the synergistic optimization of tunability and dielectric loss,as well as temperature stability.To optimize the performance of films,the dielectric properties are adjusted through the improved preparation processes,annealing modification,controlled composition ratio,and doping modification as well.These optimization measures provide some opportunities for the design and preparation of microwave devices based on the BST films.To investigate the dielectric properties of BST thin film,high-annealing in the preparation process can repair defects and improve grain growth,while controlling growth atmosphere can optimize the surface roughness and grain boundary characteristics of the film.Selecting appropriate substrates or inserting buffer to control stress can optimize the film structure and improve the dielectric performance.In addition,the Ba/Sr/Ti molar ratio regulation has a significant impact on the ferro-dielectric properties (i.e.,the Curie temperature) of the film.The use of oxide molecular beam epitaxy (MBE)can achieve a better stoichiometric control and a low defect density.Doping regulation can change the lattice parameters and ion interactions of BST films.Some methods such as acceptor doping donor doping,

关 键 词：钛酸锶钡 薄膜 介电性能 可调谐微波器件 

分 类 号：TB34[一般工业技术—材料科学与工程]