宽禁带半导体器件开关振荡研究综述  

A Review of Switching Oscillation in Wide Band Gap Semiconductor Devices

作　　者：孙帅 林仲康 唐新灵 魏晓光 赵志斌 SUN Shuai;LIN Zhongkang;TANG Xinling;WEI Xiaoguang;ZHAO Zhibin(Beijing Institute of Smart Energy,Changping District,Beijing 102209,China;State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China)

机构地区：[1]北京智慧能源研究院,北京市昌平区102209 [2]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206

出　　处：《中国电机工程学报》2024年第6期2386-2407,I0026,共23页Proceedings of the CSEE

基　　金：国家电网公司总部科技项目(5500-202158438A-0-0-00)。

摘　　要：宽禁带半导体器件具有高频、高效率、高功率密度等优点。然而,低寄生电容、低阈值电压和快速开关等特性也使它们更容易受到开关振荡的影响。该文综述开关振荡的类型、产生机理、敏感参数以及抑制方法。首先,依据波形特征将振荡分为阻尼振荡及自持振荡两类;其次,建立开关振荡分析模型,包括器件模型和开关电路模型,依托该模型研究两种振荡的机理、敏感参数以及各敏感参数对振荡特性的影响规律;再次,分析两类开关振荡的差异性和关联性;最后,总结抑制开关振荡的主要方法,并对各种方法的优缺点进行比较分析。对前人研究成果进行总结和延伸,期望帮助研究人员更好地将宽禁带器件应用于高频高功率变换工况。Wide band gap semiconductor devices have the advantages of high frequency,high efficiency and high power density.However,the characteristics of low parasitic capacitance,low threshold voltage and fast switching also make them more susceptible to switching oscillation.In this paper,the types,mechanism,sensitive parameters and suppression methods of switching oscillation are reviewed.First,the oscillations are divided into damped oscillations and self-sustained oscillations according to the waveform characteristics,Then,the analysis models of switching oscillation including device model and switching circuit model are established.Based on which the mechanism of two types of oscillations,sensitive parameters,and the influence of each sensitive parameter on oscillation characteristics are studied.Next,the difference and correlation between the two kinds of switching oscillations are analyzed.Finally,the main methods of suppressing switching oscillation are summarized,and the advantages and disadvantages of each method are compared and analyzed.The previous research results are summarized and extended in this paper,aiming to assist researchers in effectively applying wide band gap devices to high-frequency and high-power conversion conditions.

关 键 词：宽禁带半导体 振荡 阻尼振荡 自持振荡 反馈 负电阻 

分 类 号：TN303[电子电信—物理电子学]