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作 者:王晓龙 高鹏程 檀柏梅 杜浩毓 王方圆 WANG Xiaolong;GAO Pengcheng;TAN Baimei;DU Haoyu;WANG Fangyuan(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China;The 46th Research Institute of China Electronics Technology Group Corporation,Tianjin 300220,China)
机构地区:[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130 [3]中国电子科技集团公司第四十六研究所,天津300220
出 处:《润滑与密封》2024年第3期133-142,共10页Lubrication Engineering
基 金:国家科技重大专项(2016ZX02301003-004-007);河北省自然科学基金项目(F2022202072;F2018202174)。
摘 要:为了开发出更适合β-Ga_(2)O_(3)晶片切片的切削液,探讨金刚石线锯切片过程中不同切削液对β-Ga_(2)O_(3)晶片表面质量的影响,通过测量接触角和表面张力,研究不同切削液对β-Ga_(2)O_(3)晶片表面的润湿性。采用粗糙度测量仪、非接触式测厚仪和扫描电镜(SEM)对晶片表面进行测试表征,研究去离子水、添加AEO-9的水基切削液和乳化切削液在不同工艺参数下对切割(010)面β-Ga_(2)O_(3)晶片的表面粗糙度、表面形貌、总厚度变化以及亚表面损伤层深度的影响。结果表明:与去离子水相比,添加AEO-9的水基切削液和乳化切削液均能有效降低β-Ga_(2)O_(3)表面的接触角和表面张力,表明2种切削液均可提高晶片表面润滑性;乳化切削液的效果随着工艺参数的变化而波动很大,只有在低切削热和大切削力的条件下,才能明显优化晶圆表面质量,而水基切削液可稳定地获得较高的晶片表面质量,更适用于β-Ga_(2)O_(3)晶片切割。In order to develop a cutting fluid more suitable forβ-Ga_(2)O_(3) wafer slicing,the effects of different cutting fluids on the surface quality ofβ-Ga_(2)O_(3) wafer in the process of diamond wire saw slicing were explored.The wettability of different cutting fluids onβ-Ga_(2)O_(3) wafer surface was studied by measuring the contact angle and surface tension.The surface of the wafer was tested and characterized using roughness measuring instrument,non-contact thickness gauge,and scanning electron microscopy(SEM),and the effects of deionized water,the water-based cutting fluid and emulsified cutting fluid with AEO-9 on the surface roughness,surface topography,total thickness variation and sub-surface damage layer depth ofβ-Ga_(2)O_(3)(010)wafer sliced under different wire speed and feed rate were investigated.The results show that both the emulsified cutting fluid and the water-based cutting fluid can effectively reduce the contact angle and surface tension on theβ-Ga_(2)O_(3) surface compared to deionized water,which indicates that the lubricating capacity of both cutting fluids is improved.The effect of emulsified cutting fluid fluctuates greatly with the change of process parameters,and the wafer surface quality can be obviously optimized only under the conditions of low cutting heat and large cutting force.However,the higher wafer surface quality can be stably obtained with the water-based cutting fluid.Therefore,the water-based cutting fluid is more suitable forβ-Ga_(2)O_(3) single crystal slicing.
关 键 词:β-Ga_(2)O_(3)单晶 线锯切割 切削液 润滑能力 表面质量
分 类 号:TH117.1[机械工程—机械设计及理论]
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