Ti/TiO_(2)/p-Si阻变存储器中非线性电阻转变机制的研究  

Nonlinear Resistive Switching Mechanism in Ti/TiO_(2)/p-Si Resistive Switching Memory Devices

作　　者：罗涵琼 胡全丽 Luo Hanqiong;Hu Quanli(Nano Innovation Institute,College of Chemistry and Materials Science,Inner Mongolia Minzu University,Tongliao 028000,China)

机构地区：[1]内蒙古民族大学化学与材料学院纳米创新研究院,内蒙古通辽028000

出　　处：《山东化工》2024年第4期12-14,共3页Shandong Chemical Industry

基　　金：国家自然科学基金(22261043);内蒙古民族大学博士启动基金(BS456);内蒙古自治区高等学校科学技术研究项目(NJZZ22461);内蒙古自治区自然科学基金青年基金项目(项目编号:2022QN02016)。

摘　　要：采用磁控溅射沉积技术在p型硅片(p-Si)上沉积TiO_(2)薄膜,然后使用掩模板沉积Ti顶电极,制备出具有Ti/TiO_(2)/p-Si结构的阻变存储器。该器件表现出了稳定的非线性电阻转变特性,该器件具有自整流效应,并且具有较大的开关比(高于10^(3))和非常稳定的循环特性。器件的电阻转变机制为空间电荷限制电流传导和肖特基发射机制。研究表明Ti/TiO_(2)/p-Si器件是一种非常有潜力的下一代非易失性存储器件。TiO_(2) thin film was deposited on p-type silicon(p-Si)substrate by magnetron sputtering technology.Ti top electrode was deposited using hard mask.The resistive switching memory devices with Ti/TiO_(2)/p-Si structure were prepared.The device exhibits stable nonlinear resistance switching characteristics,and the device has a self-rectifying effect.Moreover,the device has a large on/off ratio(larger than 103)and very stable endurance characteristics.The resistive switching mechanisms of the device include space charge limited current conduction and Schottky emission.It is shown that Ti/TiO_(2)/p-Si device is a promising next generation non-volatile memory device.

关 键 词：氧化钛 薄膜 阻变存储器 

分 类 号：TQ152[化学工程—电化学工业]