1700 V精细沟槽栅IGBT器件设计  

Design of a 1700 V Ultra-Thin Trench Gate IGBT

作　　者：郑婷婷 Zheng Tingting(Nanjing NARI Semiconductor Co.,Ltd.,Nanjing 211100,China)

机构地区：[1]南京南瑞半导体有限公司,南京211100

出　　处：《半导体技术》2024年第4期310-315,329,共7页Semiconductor Technology

摘　　要：为了改善绝缘栅双极型晶体管(IGBT)器件关断损耗和导通压降之间的折中关系,同时降低器件制造成本,基于1 700 V电压平台设计了一种采用精细沟槽栅结构的IGBT。采用TCAD软件进行仿真,研究衬底电阻率、衬底厚度、沟槽栅深度、沟槽栅宽度、载流子存储层注入剂量、沟槽栅元胞结构等因素对精细沟槽栅IGBT器件性能参数的影响,确定了最优工艺参数,并对1 700 V精细沟槽栅IGBT芯片进行流片和封装。测试结果显示,相比普通沟槽栅IGBT模块,1 700 V精细沟槽栅IGBT模块在芯片面积减小34.2%的情况下,关断损耗降低了8.6%,导通压降仅升高5.5%,器件性价比得到了优化。In order to improve the trade-off relationship between turn-off loss and conduction voltage drop and reduce the manufacturing cost of the insulated gate bipolar transistor(IGBT),the ultra-thin trench gate structure IGBT was designed based on a 1700 V voltage platform.By using TCAD software for simulation,the effects of substrate resistivity,substrate thickness,trench gate depth,trench gate width,implantation dose of carrier storage layer,trench gate cell structure and other factors on the per-formance parameters of ultra-thin trench gate IGBTs were studied.The optimal process parameters were determined,and the 1700 V ultra-thin trench gate IGBT chip was fabricated and packaged.The test results show that compared with the ordinary trench gate IGBT module,the turn-off loss of the 1700 V utra-thin trench gate IGBT module reduces by 8.6%and the conduction voltage drop only increases by 5.5%,while the chip area reduces by 34.2%.The cost-effectiveness of the device have been optimized.

关 键 词：精细沟槽栅结构 绝缘栅双极型晶体管(IGBT) TCAD仿真 元胞结构 器件性价比 

分 类 号：TN32[电子电信—物理电子学]