基于两步刻蚀工艺的锥形TSV制备方法  

Fabrication Method of Tapered TSV Based on Two-Step Etching Process

作　　者：田苗 刘民[1] 林子涵 付学成[1] 程秀兰 吴林晟[2] Tian Miao;Liu Min;Lin Zihan;Fu Xuecheng;Cheng Xiulan;Wu Linsheng(Center for Advanced Electronic Materials and Devices,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;State Key Laboratory of Radio Frequency Heterogeneous Integration,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]上海交通大学电子信息与电气工程学院先进电子材料与器件平台,上海200240 [2]上海交通大学射频异质异构集成全国重点实验室,上海200240

出　　处：《半导体技术》2024年第4期316-322,共7页Semiconductor Technology

基　　金：上海市2022年度“科技创新行动计划”集成电路领域项目(22501100800);上海交通大学决策咨询课题资助项目(JCZXSJB-04)。

摘　　要：以硅通孔(TSV)为核心的2.5D/3D封装技术可以实现芯片之间的高速、低功耗和高带宽的信号传输。常见的垂直TSV的制造工艺复杂,容易造成填充缺陷。锥形TSV的侧壁倾斜,开口较大,有利于膜层沉积和铜电镀填充,可降低工艺难度和提高填充质量。在相对易于实现的刻蚀条件下制备了锥形TSV,并通过增加第二步刻蚀来改善锥形TSV形貌。成功制备了直径为10~40μm、孔口为喇叭形的锥形TSV。通过溅射膜层和铜电镀填充,成功实现了直径为15μm、深度为60μm的锥形TSV的连续膜层沉积和完全填充,验证了两步刻蚀工艺的可行性和锥形TSV在提高膜层质量和填充效果方面的优势。为未来高密度封装领域提供了一种新的TSV制备工艺,在降低成本的同时提高了2.5D/3D封装技术的性能。The 2.5D/3D packaging technology with through silicon via(TSV)as the core enables high-speed,low-power and high-bandwidth signal transmission between chips.The manufacturing process of the conventional vertical TSV is complex and prone to filling defects.Tapered TSVs can reduce process difficulty and improve filling quality since the sloped sidewalls and the larger openings are favorable for film layer deposition and Cu electroplating filling.The tapered TSV was fabricated under relatively easy-to-achieve etching conditions,and the morphology of the tapered TSV was improved by adding a second etching step.The tapered TSV with a diameter of 10-40μm and flared opening was successfully fabrica-ted.By film layer sputtering and Cu electroplating filling,the continuous film layer deposition and com-plete filling of a tapered TSV with a diameter of 15μm and a depth of 60μm was successfully achieved.The results verify the feasibility of two-step etching process and the advantages of the tapered TSV in im-proving film layer quality and filling effect.It provides a new TSV fabrication process for the future high-density packaging field,which improves the performance of 2.5D/3D packaging technology while reducing costs.

关 键 词：硅通孔(TSV) 锥形 种子层 电镀填充 薄膜沉积 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]