面向FLASH存储器应用的电压自举电荷泵电路设计  

Bootstrap Charge Pump Circuit for FLASH Memory Application

作　　者：陈智峰 陈煌伟 陈继明 陈铖颖 黄渝斐 CHEN Zhifeng;CHEN Huangwei;CHEN Jiming;CHEN Chengying;HUANG Yufei(School of Opto-Electronic and Communication Engineering,Xiamen University of Technology,Xiamen 361024,China)

机构地区：[1]厦门理工学院光电与通信工程学院,福建厦门361024

出　　处：《厦门理工学院学报》2024年第1期17-22,共6页Journal of Xiamen University of Technology

基　　金：福建省自然科学基金引导性项目(2023H0052);厦门市重大科技项目(3502Z20221022)。

摘　　要：基于SMIC 0.18μm 1P6M工艺,设计出一款面向FLASH存储器应用需求的开环电荷泵升压电路。该电路主要由振荡电路、分频电路、非交叠时序电路、电荷泵和高压选择电路组成。为实现电荷泵电压的自举,本设计采用高电压选择电路和开环无反馈结构电荷泵,通过调整电容比值,满足不同的输出升压需求。仿真结果表明,在电源电压为1.8 V、内部开关时钟频率为50 kHz、带载为5 mA的条件下,电荷泵的输出电压为3.3 V,纹波仅为10 mV,升压效率高达96%。与其他电荷泵相比,本设计提高了输出效率,可满足不同输出升压的需求。This paper presents an open-loop charge pump voltage boosting circuit tailored for FLASH memory applications based on the SMIC 0.18μm 1P6M process technology.The circuit consists mainly of an oscillation circuit,a frequency division circuit,a non-overlapping timing circuit,a charge pump,and a highvoltage selection circuit.The circuit utilizes a high-voltage selection scheme to achieve self-bootstrapping of the charge pump voltage and adopts an open-loop non-feedback charge pump and an adjusted capacitance ratio to meet different output boost requirements.Simulation results demonstrate that under the conditions of a 1.8 V power supply voltage,an internal switch clock frequency of 50 kHz and a load of 5 mA,the charge pump achieves an output voltage of 3.3 V with a ripple amplitude of only 10 mV,acquiring an impressive boost efficiency of 96%.Compared to other charge pumps,this design showcases higher efficiency,thereby improving the output efficiency and capable of meeting various voltage boosting requirements.

关 键 词：电荷泵 电路设计 自举升压 高电压选择 升压效率 FLASH存储器 

分 类 号：TN402[电子电信—微电子学与固体电子学]