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作 者:刘哲彤 刘秉尧 梁冬冬 李晓梅 李晓敏 陈莉 朱瑞 徐军 魏同波 白雪冬 高鹏 Zhetong Liu;Bingyao Liu;Dongdong Liang;Xiaomei Li;Xiaomin Li;Li Chen;Rui Zhu;Jun Xu;Tongbo Wei;Xuedong Bai;Peng Gao(Electron Microscopy Laboratory,School of Physics,Peking University,Beijing 100871,China;Academy for Advanced Interdisciplinary Studies,Peking University,Beijing 100871,China;Research and Development Center for Semiconductor Lighting Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;International Center for Quantum Materials,Peking University,Beijing 100871,China)
机构地区:[1]Electron Microscopy Laboratory,School of Physics,Peking University,Beijing 100871,China [2]Academy for Advanced Interdisciplinary Studies,Peking University,Beijing 100871,China [3]Research and Development Center for Semiconductor Lighting Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [4]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [5]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [6]International Center for Quantum Materials,Peking University,Beijing 100871,China
出 处:《Chinese Physics B》2024年第3期144-149,共6页中国物理B(英文版)
基 金:Project supported by the National Key R&D Program of China (Grant No. 2019YFA0708202);the National Natural Science Foundation of China (Grant Nos. 11974023, 52021006, 61974139, 12074369, and 12104017);the “2011 Program” from the Peking–Tsinghua–IOP Collaborative Innovation Center of Quantum Matter;the Youth Supporting Program of Institute of Semiconductors
摘 要:To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In_(0.15)Ga_(0.85)N five-period multiquantum wells.The lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy,and the bandgaps of In_(0.15)Ga_(0.85)N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence spectra.The luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were revealed.Our study establishing the direct relationship between the atomic structure of In_(x)Ga_(1-x)N multiquantum wells and photoelectric properties provides useful information for nitride applications.
关 键 词:nitride multiquantum wells defect CATHODOLUMINESCENCE scanning transmission electron microscopy
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