铌酸锂导电畴壁及其应用  

Conductive Domain Wall and Its Applications in Lithium Niobate

作　　者：张煜晨 李三兵 许京军 张国权 ZHANG Yuchen;LI Sanbing;XU Jingjun;ZHANG Guoquan(The MOE Key Laboratory of Weak-Light Nonlinear Photonics,School of Physics and TEDA Applied Physics Institute,Nankai University,Tianjin 300071,China)

机构地区：[1]南开大学物理科学学院&泰达应用物理研究院,弱光非线性光子学教育部重点实验室,天津300071

出　　处：《人工晶体学报》2024年第3期395-409,共15页Journal of Synthetic Crystals

基　　金：国家重点研发计划专项(2022YFA1404604);国家自然科学基金重点项目(12134007);天津市市科技计划重点项目(21JCZDJC00150);高等学校学科创新引智计划(111计划)(B23045)。

摘　　要：铌酸锂(LiNbO3,LN)是一种多功能的单轴铁电材料,广泛应用于光学调制器、光学频率梳、光波导等领域。导电畴壁(DW)作为镶嵌在绝缘材料中纳米尺度的导电通道,在非易失性存储器、逻辑门、晶体管等领域展现出重要的应用前景,促进了铌酸锂在纳米光电子学领域的应用。绝缘体上铌酸锂薄膜(LNOI)畴壁p-n结的实现有望进一步促进铌酸锂基光电一体化芯片的发展进程。本文简要回顾了铌酸锂导电畴壁的研究进展,介绍了畴壁的制备、导电机制、导电类型和畴壁的应用,重点介绍了铌酸锂畴壁p-n结的研究,进一步结合应用热点概述了铌酸锂畴壁光电子器件开发进程中的关键问题、机遇和挑战。Lithium niobate(LiNbO3,LN)is a kind of multi-functional uniaxial ferroelectric material,and is widely used in optical modulators,optical frequency combs,optical waveguides,and so on.The emergence of conductive domain wall(DW),serving as a nanoscale conductive path embedded in the insulating materials and showing important application prospects in non-volatile memristor,logic gate,and transistor,etc.,promoted the application of LN in the field of nano-optoelectronics.The realization of DW p-n junction in LN on an insulator(LNOI)is expected to push forward the development of opto-electronics integrated chips based on LN.This paper provides a concise review on the study of DWs in LN,including the fabrication techniques,the conduction mechanism and types of DWs as well as the development of applications based on DWs,especially the achievement of DW p-n junction.Furthermore,combined with the hot potential applications,the key issues,challenges and opportunities in the development DW-based opto-electronic devices based on LN were summarized.

关 键 词：铌酸锂 导电畴壁 P-N结 薄膜 铁电 纳米光电子学 

分 类 号：O738[理学—晶体学]