Dielectric and energy storage properties of PbO–SrO–Nb_(2)O_(5)–Na_(2)O–Si thin films by annealing  

作　　者：Fei-Hu Tan Qing-Meng Zhang Feng Wei Hong-Bin Zhao Xiao Zhang Jun Du 

机构地区：[1]State Key Laboratory of Advanced Materials for Smart Sensing,General Research Institute for Nonferrous Metals,Beijing 100088,China [2]Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals,Beijing 100088,China

出　　处：《Rare Metals》2024年第1期351-355,共5页稀有金属（英文版）

基　　金：financially supported by the National Natural Science Foundation of China (No.51477012);Beijing Nova Program (No.xx2016046)。

摘　　要：Dielectric and energy storage properties of PbOSrO-Na_(2)O-Nb_(2)O_(5)-SiO_(2)(PSNNS) thin films with annealing temperature from 700 to 850 ℃ were investigated by measuring their capacitance-electric filed curve and hysteresis loops.The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm^(-3),respectively,which is obtained in the sample with annealing temperature of 800 ℃.Annealed from 700 to800 ℃,the dielectric constant and energy storage performance of PSNNS films are continuously improved.However,with annealing temperature up to 850 ℃,their dielectric constant decreases,which might be related with the removal of interfacial defects as a function of annealing temperature.Defect is one of the causes of space charge phenomenon,resulting in the increase in dielectric constant.Moreover,the micro structure analysis by X-ray diffraction(XRD) and transmission electron microscope(TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.

关 键 词：Thin film Pulse laser deposition Annealing temperature Energy storage density 

分 类 号：TB383.2[一般工业技术—材料科学与工程]