基于硅材料MOS量子点单自旋量子比特的研究与实现  

Research and Realization of Single Spin Qubits Based on Silicon MOS Quantum Dots

作　　者：顾杰 殷华湘[1,2,3] 吴振华 张青竹 Gu Ji;Yin Huaxiang;Wu Zhenhua;Zhang Qingzhu(Integrated Circuit Advanced Process Center(ICAC),Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;State Key Laboratory of Advanced Materials for Smart Sensing,China GRINM Group Co.,Ltd.,Beijing 100088,China;Key Laboratory of Microelectronics Devices&Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences(CAS),Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心,北京100029 [2]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100088 [3]中国科学院大学,北京100029 [4]中国有研科技集团有限公司智能传感功能材料国家重点实验室,北京100049

出　　处：《稀有金属》2024年第1期118-137,共20页Chinese Journal of Rare Metals

基　　金：中国科学院战略性先导科技专项项目(Y9XDC2X001);中国科学院微电子器件与集成技术重点实验室课题基金项目(Y8YS03X002);中国科学院青年促进会基金项目(Y9YQ01R004)资助。

摘　　要：量子计算作为未来计算技术发展的一个重要方向,在一些特定领域具有现代计算机无可比拟的强大优势。基于硅材料的金属氧化物半导体(metal-oxide-semiconductor,MOS)量子点自旋量子比特由于拥有较长的相干时间以及与现代集成电路工艺兼容等优势,在近些年来获得了广泛研究,并取得了较大发展,成为了实现通用量子计算重要的候选方案之一。总结了硅MOS量子点单自旋量子比特实现方案,介绍了硅量子点量子计算的研究背景及意义,叙述目前硅MOS量子点单自旋量子比的研究进展,介绍了MOS量子点器件结构、量子点电荷输运理论、量子比特的读出、量子比特的操作、退相干的影响因素与抑制方法以及扩展与集成等方面的内容,最后讨论了硅MOS量子点自旋量子比特在实现通用量子计算方面面临的挑战与未来发展趋势。As a future-oriented computing technology,quantum computing has unparalleled advantages over the application of modern computers in some specific fields,which makes the realization of universal quantum computing become an important research direction.As one of the candidates for universal quantum computing,qubit based on silicon quantum dots has attracted much attention due to the long qubit decoherence time brought by the material characteristics of silicon and the advantages of compatibility with CMOS technology.At present,the research of this scheme has reached the important stage of introducing advanced CMOS technology to realize the extension and integration of qubits.In this paper,the realization scheme of single spin qubit in silicon MOS quantum dots was systematically summarized.Firstly,the research background and significance of quantum computation of silicon quantum dots were introduced.Then the research progress of single spin quantum ratio of silicon MOS quantum dots was described in detail.The device of MOS quantum dots was analyzed,including the basic quantum dot structure,the different types of MOS quantum dots and the fabrication process.The charge transport theory in quantum dots was introduced,which included the charge transport in single quantum dot and double quantum dots,and the principle as well as characterization method of pauli spin blockade effect.The methods of readout of quantum bits were also analyzed,which included the readout by spin-to-charge conversion method using different type of charge sensors,like quantum point contact,single field transistor and gate-based sensor.The single spin state could be readout by the charge sensors technology,which included three steps:empty,inject & wait and read-out.The energy-selective read-out method was introduced in details.Also,single spin state operation of quantum bits was analyzed in details,which included the rabi cycle in two-energylevel system,the principle and realization method of electron spin resonance in MOS quantum dot.The electric

关 键 词：硅量子点 量子比特 量子计算 自旋 

分 类 号：TN386.1[电子电信—物理电子学]