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作 者:吴永乐[1] 吴昊鹏 赖志国 蔡洵 唐滨 杨清华 杨雨豪 王卫民[2] WU Yong-le;WU Hao-peng;LAI Zhi-guo;CAI Xun;TANG Bin;YANG Qing-hua;YANG Yu-hao;WANG Wei-min(School of Integrated Circuits,Beijing University of Posts and Telecommunications,Beijing 100876,China;School of Electronic Engineering,Beijing University of Posts and Telecommunications,Beijing 100876,China;HunterSun Electronics Company,Ltd.,Suzhou,Jiangsu 215000,China)
机构地区:[1]北京邮电大学集成电路学院,北京100876 [2]北京邮电大学电子工程学院,北京100876 [3]苏州汉天下电子有限公司,江苏苏州215000
出 处:《电子学报》2024年第2期407-413,共7页Acta Electronica Sinica
基 金:国家自然科学基金(No.U20A20203,No.61971052);北京邮电大学中央高校基本科研业务费行动计划项目(No.2021XD-A07-2);广东省重点领域研发计划项目(No.2020B0101080001)。
摘 要:本文研究了框架结构(Frame)对薄膜体声波谐振器(Film Bulk Acoustic Resonator,FBAR)提升性能的作用,从两种Frame结构对体声波能量的反射匹配基础理论出发,针对其功能特点,以实验的方式确定了低频和高频多组框架微结构的组合,对多组FBAR进行了版图绘制以及光刻流片,最终通过片上测试得到了所有分组的谐振器性能.对测试得到的性能进行了分组统计筛选,从测试结果来看,经过优选之后的Frame结构分组无论是对低频还是高频FBAR谐振器都具有提升性能的作用.对低频(1.7 GHz附近)FBAR来说,并联谐振品质因数可以提升1000以上.对高频(5.5 GHz附近)FBAR来说,并联谐振品质因数可以提升300以上.对横向寄生模式较强的高频FBAR,优选的Frame结构可以提升谐振器的横向寄生模式抑制,使串联谐振频率之下的阻抗相位波动减少5°以上.The effect of frame on the performance improvement of thin film bulk acoustic resonator(FBAR)is stud⁃ied.Based on the basic theory of reflection and matching of two kinds of frame structures to keep acoustic energy,accord⁃ing to their functional characteristics,several groups of frame microstructure combinations of low frequency and high fre⁃quency are determined experimentally,and the two groups of FBAR are taped out.Finally,the resonator of all groups is ob⁃tained by on-wafer test.The selected frame structure group can improve the performance of both low-frequency and highfrequency FBAR.For low frequency(around 1.7 GHz)FBAR,the quality factor of parallel resonance can be increased by more than 1000.For high frequency(around 5.5 GHz)FBAR,the quality factor of parallel resonance can be increased by more than 300.For the high frequency FBAR with strong transverse parasitic mode,the optimized frame structure can im⁃prove the transverse parasitic suppression and reduce the impedance phase fluctuation under the series resonant frequency by more than 5°.
关 键 词:薄膜体声波谐振器 框架结构 流片实验 阻抗相位波动
分 类 号:TN385[电子电信—物理电子学]
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