Double-ended passivator enables dark-current-suppressed colloidal quantum dot photodiodes for CMOS-integrated infrared imagers  

作　　者：Peilin Liu Shuaicheng Lu Jing Liu Bing Xia Gaoyuan Yang Mo Ke Xuezhi Zhao Junrui Yang Yuxuan Liu Ciyu Ge Guijie Liang Wei Chen Xinzheng Lan Jianbing Zhang Liang Gao Jiang Tang 

机构地区：[1]Wuhan National Laboratory for Optoelectronics(WNLO)and School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan,the People's Republic of China [2]Wenzhou Advanced Manufacturing Technology Institute,Huazhong University of Science and Technology,Wenzhou,the People's Republic of China [3]School of Physics and Electronic Engineering,Hubei University of Arts and Science,Xiangyang,the People's Republic of China [4]School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan,the People's Republic of China [5]School of Engineering Physics,Shenzhen Technology University,Shenzhen,the People's Republic of China [6]Optics Valley Laboratory,Wuhan,the People's Republic of China [7]Shenzhen Huazhong University of Science and Technology Research Institute,Shenzhen,the People's Republic of China

出　　处：《InfoMat》2024年第1期108-122,共15页信息材料（英文）

基　　金：National Natural Science Foundation of China,Grant/Award Numbers:U22A2083,62204091,62374068;National Key Research and Development Program of China,Grant/Award Number:2021YFA0715502;Key R&D program of Hubei Province,Grant/Award Number:2021BAA014;Innovation Project of Optics Valley Laboratory,Grant/Award Numbers:OVL2021BG009,OVL2023ZD002;Exploration Project of Natural Science Foundation of Zhejiang Province,Grant/Award Number:LY23F040005;Fund for Innovative Research Groups of the Natural Science Foundation of Hubei Province,Grant/Award Number:2020CFA034;Fund from Science,Technology and Innovation Commission of Shenzhen Municipality,Grant/Award Numbers:GJHZ20210705142540010,GJHZ20220913143403007;China Postdoctoral Science Foundation,Grant/Award Numbers:2021M691118,2022M711237,2022M721243,2023T160244。

摘　　要：Lead sulfide(PbS)colloidal quantum dot(CQD)photodiodes integrated with silicon-based readout integrated circuits(ROICs)offer a promising solution for the next-generation short-wave infrared(SWIR)imaging technology.Despite their potential,large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on nonpassivated(100)facets and trap states generated by CQD fusion.In this work,we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate(100)facets of halidecapped large-size CQDs,leading to suppressed bandtail states and reduced defect concentration.Our results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm^(2) at -10 mV,which is among the lowest reported for PbS CQD photodiodes.Furthermore,the performance of the photodiodes is exemplary,yielding an external quantum efficiency of 50.8%(which corresponds to a responsivity of 0.532 A W^(-1))and a specific detectivity of 2.5×10^(12) Jones at 1300 nm.By integrating CQD photodiodes with CMOS ROICs,the CQD imager provides high-resolution(640×512)SWIR imaging for infrared penetration and material discrimination.

关 键 词：CMOS integration colloidal quantum dots dark current suppression double-ended passivation infrared imager 

分 类 号：TN31[电子电信—物理电子学]